High-performance multilayer thin-film encapsulation for organic micro-displays by inserting in situ plasma oxidized Al layers between SiO _x layers

Abstract

Multilayer thin-film encapsulation plays an important role in Si-based organic micro-displays. In this letter, we demonstrate an efficient and low-process-temperature approach to fabricate high-performance barrier films by inserting in situ plasma oxidized Al layers between SiOx encapsulation layers. Calcium degradation tests show that the water vapor transmission rate of the SiOx/AlOx multilayer barrier film is 2.23 × 10−5 g m−2 day−1 under the conditions of 25 °C and 70% relative humidity after in situ plasma oxidation treatment for 20 min, which is a reduction of two orders of magnitude compared with single-layer SiOx barrier films.

Rapid-deposited high-performance submicron encapsulation film with in situ plasma oxidized Al layer inserted

“…In our previous work, 26) based on the rapid deposition characteristics of PECVD, we proposed a new high-performance submicron multilayer thin-film encapsulation method for organic optoelectronic devices by inserting in situ plasma oxidized Al layer between the SiO 2 layers. The inserting layer decoupled partial defects of the SiO 2 films deposited under relatively low temperature (<100 °C) from hexamethyldisiloxane (HMDSO).…”