High‐Performance Monolayer WS<sub>2</sub> Field‐Effect Transistors on High‐κ Dielectrics

Cui, Yang; Xin, Run; Yu, Zhihao; Pan, Yiming; Ong, Zhun-Yong; Wei, Xiaoxu; Wang, Junzhuan; Nan, Haiyan; Ni, Zhenhua; Wu, Yun; Chen, Tangsheng; Shi, Yi; Wang, Baigeng; Zhang, Gang; Zhang, Yong‐Wei; Wang, Xinran

doi:10.1002/adma.201502222

Cited by 225 publications

(210 citation statements)

References 32 publications

(60 reference statements)

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“…4a). On the contrary, semiconducting TMDs can provide thinner layers with a mobility value in the 20-200 cm # /Vs range [78][79] [81][82] [84]. Graphene has been shown to achieve mobility at room temperature exceeding 2,000 cm # /Vs on SiO2 substrates [76] and close to 80,000 cm # /Vs on hexagonal BN [61].…”

Section: Figurementioning

confidence: 99%

“…At the transistor level, they translate into specifications for the OFF current, i.e., 599 must be 100 nA/µm in the case of HP devices and 100 pA/µm in the case of LP devices [40] [41]. [73] [74], holes in SOI [74], holes in germanium-on-insulator [75], graphene on SiO2 [76], graphene embedded in h-BN [61], InAs [77], WSe2 [78] [79], WS2 [81], black phosphorus [82] [83], MoS2 [84] [85], c) Experimental Rc of different 2D materials and thin body semiconductors compared with expectations of the ITRS. Data sources: ITRS [40], MoS2 [84], MoS2-2H/Au and MoS2-1T/Au [86], MoS2/Au [87] [88] and MoS2/Ni [87], Pd-Graphene [90], d) Scatter plot of delay time and power-delay product for High Performance Logic of different 2D Heterostructurebased FET and comparison with ITRS 2015 e) Scatter plot of delay time and power-delay product for Low Standby Power logic of different 2D Heterostructure-based FET and comparison with ITRS 2015.…”

Section: Figurementioning

confidence: 99%

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Quantum engineering of transistors based on 2D materials heterostructures

et al. 2018

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Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Quantum engineering of transistors based on 2D materials heterostructures

et al. 2018

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“…These conductivities are just above the results of MoO 2 nanorods, and much higher than the conductivities of other 2D compounds such as transition metal dichalcogenides, black phosphorus, and SnO. 2,[34][35][36][37] The exceptionally high conductivity of individual MoO 2 nanosheet is ascribed to the unique crystal structure. To the best of our knowledge, the m-MoO 2 crystal has a rutile-type structure, which is built up by MoO 6 octahedral units (see inset of Fig.…”

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confidence: 87%

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Liu

Ren

et al. 2017

AIP Advances

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Exploration and development of new two-dimensional (2D) materials with good stability and remarkable physical properties have become the research hotspots. We report for the first time the monodispersity of ultrathin MoO2 nanosheets have been synthesized through an improved chemical vapor deposition (CVD) method using only molybdenum trioxide as precursor. The grown MoO2 nanosheets have an average thickness of ∼ 5 to 10 nm and exhibit good crystal-quality. Temperature-dependent Raman spectra show that the ultrathin MoO2 nanosheets have high thermal stability up to 503 K. In addition, the first order temperature coefficients of the MoO2 characteristic Raman modes O1–Mo and O2–Mo were firstly found to be -1.91×10-2 and -3.94×10-2 cm−1/K, respectively. Two-probe electrical measurements show that the as-fabricated ultrathin MoO2 nanosheets devices preserve a high electrical conductivity in ambient conditions, reaching up to 200 - 475 S/cm. The exceptionally high conductivity of individual MoO2 nanosheet is ascribed to the unique crystal structure. Our results demonstrate that the ultrathin MoO2 nanosheets show great potential applications in constructing new integrated electronic devices and systems.

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“…Moreover, the large surface to volume ratio in 2D materials enhances the significance of surface interactions and charging effects. Thus, the dielectric permittivity mismatch between the 2D semiconductor materials, the surrounding environment, and an induced strain from capping material can intricately affect the electronic and optoelectronic properties of low dimensional materials [38].…”

Section: Introductionmentioning

confidence: 99%

Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs Dimer Nanoscale Antennae

Tahersima

Birowosuto

et al. 2017

ACS Photonics

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Monolayer transition metal dichalcogenides are uniquely-qualified materials for photonics because they combine well-defined tunable direct band gaps and self-passivated surfaces without dangling bonds. However, the atomic thickness of these two-dimensional (2D) materials results in low photo absorption limiting the achievable photo luminescence intensity. Such emission can, in principle, be enhanced via nanoscale antennae resulting in; a) an increased absorption cross-section enhancing pump efficiency, b) an acceleration of the internal emission rate via the Purcell factor mainly by reducing the antenna's optical mode volume beyond the diffraction limit, and c) improved impedance matching of the emitter dipole to the free-space wavelength.Plasmonic dimer antennae show orders of magnitude hot-spot field enhancements when an emitter is positioned exactly at the mid-gap. However, a 2D material cannot be grown, or easily transferred, to reside in mid-gap of the metallic dimer cavity. In addition, a spacer layer between the cavity and the emissive material is required to avoid non-radiative recombination channels.Using both computational and experimental methods, in this work we show that the emission enhancement from a 2D emitter-monomer antenna cavity system rivals that of dimers at much reduced lithographic effort. We rationalize this finding by showing that the emission enhancement in dimer antennae does not specifically originate from the gap of the dimer cavity, but is an average effect originating from the effective cavity crosssection taken below each optical cavity where the emitting 2D film is located. In particular, we test an array of different dimer and monomer antenna geometries and observe a representative ~300% higher emission for both monomer and dimer cavities as compared to intrinsic emission of Chemical Vapor Deposition (CVD)-synthesized WS 2 flakes. Observed enhanced light emission from these 3 atomically thin flakes together with the lithographic control of plasmonic antennae on them opens opportunities for engineering light-matter interaction in 2D systems in a test-bed comparable fashion, enabling bright and large-scale 2D opto-electronics.

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High‐Performance Monolayer WS₂ Field‐Effect Transistors on High‐κ Dielectrics

Cited by 225 publications

References 32 publications

Quantum engineering of transistors based on 2D materials heterostructures

Quantum engineering of transistors based on 2D materials heterostructures

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs Dimer Nanoscale Antennae

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High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Cited by 225 publications

References 32 publications

Quantum engineering of transistors based on 2D materials heterostructures

Quantum engineering of transistors based on 2D materials heterostructures

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs Dimer Nanoscale Antennae

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High‐Performance Monolayer WS₂ Field‐Effect Transistors on High‐κ Dielectrics