High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

Looi, Hui Jin; Pang, Lisa Y.S.; Wang, Yupei; Whitfield, Michael D.; Jackman, Richard B.

doi:10.1016/s0925-9635(97)00273-2

Cited by 24 publications

(11 citation statements)

References 15 publications

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“…The transistor characteristics for devices formed on this type of material suggest that the carriers are dispersed throughout a layer of up to 20 nm in depth. 12 This implies carrier concentrations as high as 10 19 cm Ϫ3 are being achieved in these samples. The variation in carrier concentration with temperature differs markedly in the case of C2, compared to all of the other sample types.…”

mentioning

confidence: 93%

Formation of shallow acceptor states in the surface region of thin film diamond

Williams

Whitfield

Jackman

et al. 2001

Applied Physics Letters

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Considerable interest exists in fabrication of electronic devices from thin film polycrystalline diamond. To date, doping this material to achieve good free carrier concentrations and mobilities at room temperature has proved difficult. In this letter we report low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p type without the addition of conventional dopant atoms. High carrier concentrations and mobilities can be achieved. The change in carrier concentration within the temperature range 10–300 K does not change as expected for most films, actually increasing as the temperature falls. This effect could be related to the confinement of carriers at the surface caused by the dipole provoked by adsorbed hydrogen on the diamond. However, polished films display more conventional behavior in that the carrier concentration falls with falling temperature.

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confidence: 93%

Formation of shallow acceptor states in the surface region of thin film diamond

Williams

Whitfield

Jackman

et al. 2001

Applied Physics Letters

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“…Using the surface p-type conductivity of hydrogen-terminated surfaces, high performance metal-semiconductor field effect transistors (MESFETs) [8,9] and metal-insulator-semiconductor FETs (MISFETs) [10,11] have been fabricated on homoepitaxial layers. Even in polycrystalline diamond, MESFETs [12] and MISFETs [13] are also reported.…”

Section: Introductionmentioning

confidence: 99%

Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors

Kawarada

Araki

Sakai

et al. 2001

phys. stat. sol. (a)

129

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Diamond field effect transistors have operated in electrolyte solution for the first time. Since the hydrogen-terminated diamond surfaces are stable enough for the use as an electrochemical electrode, the diamond surface channels are exposed to the electrolyte in the transistor structure. A perfect pinch-off and saturated current-voltage characteristics have been obtained for bias voltages within the potential window. The threshold voltages are almost constant in electrolytes with different pH values of 7-13, indicating pH insensitiveness of the hydrogen-terminated diamond surface. Based on this pH insensitive surface, ion selective regions can be fabricated to form transistor-based biosensors.

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“…Surface wetchemical oxygenation removes the conductive layer and restores the insulating properties of diamond. Meanwhile, the surface related conductivity has been utilized for electronic applications like Schottky diodes, MESFET and MOSFET structures [5,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Surface Conductivity of Hydrogenated Diamond

Sauerer

Ertl

Nebel

et al. 2001

phys. stat. sol. (a)

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Conductivity and Hall experiments are performed on hydrogenated poly-CVD, atomically flat homoepitaxially grown Ib and natural type IIa diamond layers in the regime 0.34 to 400 K. For all experiments hole transport is detected with sheet resistivities at room temperature in the range 10 4 to 10 5 W/ & . We introduce a transport model where a disorder induced tail of localized states traps holes at very low temperatures (T < 70 K). The characteristic energy of the tail is in the range of 6 meV. Towards higher temperatures (T > 70 K) the hole density is approximately constant and the hole mobility m is increasing two orders of magnitude. In the regime 70 K < T < 200 K, m is exponentially activated with 22 meV, above it follows a $T 3/2 law. The activation energy of the hole density at T < 70 K is governed by the energy gap between holes trapped in the tail and the mobility edge which they can propagate. In the temperature regime T < 25 K an increasing hole mobility is detected which is attributed to transport in delocalized states at the surface.

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High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

Cited by 24 publications

References 15 publications

Formation of shallow acceptor states in the surface region of thin film diamond

Formation of shallow acceptor states in the surface region of thin film diamond

Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors

Low Temperature Surface Conductivity of Hydrogenated Diamond

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