High-performance low-temperature p-channel polycrystalline-germanium thin-film transistors via continuous wave laser crystallization

Wu, Chun-Yi; Li, Yi-Shao; Chou, Chang‐Pin; Cheng, Huang–Chung

doi:10.1109/am-fpd.2016.7543639

Cited by 2 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This means that the crystallization direction does not have any tendency in the in-plane direction. Thus, vertical Ge solidification was seeded from the un-melted solid Ge and proceeded toward the Ge film surface with competitive selection and widening of favored grains [25]. This led to the formation of polygonal grains that were hundreds of nanometers wide.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, many technologies have been proposed to produce high-quality poly-Ge films on insulators in order to improve the performance of poly-Ge TFTs. These technologies include solid phase crystallization (SPC) [15], [16], metalinduced crystallization (MIC) [17], [18], metal-induced lateral crystallization (MILC) [10], [19], lateral liquid-phase epitaxy (LLPE) [20], [21], epitaxial growth with seed layer [22], excimer laser crystallization (ELC) [23], [24], and continuous-wave laser crystallization (CLC) [25], [26]. Unfortunately, SPC requires a long process time for sufficient annealing while the resultant film quality is poor.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

Liao

et al. 2019

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 μm, 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm 2 /V-s.INDEX TERMS Polycrystalline germanium (poly-Ge), continuous-wave laser crystallization (CLC), counter-doping (CD), thin-film transistor (TFT).

show abstract

Section: Resultsmentioning

confidence: 99%