High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Feilchenfeld, N.; Lanzerotti, L.; Sheridan, David C.; Wuthrich, R.; Geiss, P.; Coolbaugh, Douglas; Gray, P.; Jing, He; Demag, P.; Greco, J.; Larsen, Torben; Patel, V.; Zierak, M.; Hodge, W.; Rascoe, J.; Trappasso, J.; Orner, B.; Norris, Aaron J.; Hershberger, D.; Voegeli, B.; Voldman, Steven H.; Rassel, R.; Ramachandrian, V.; Gautsch, M.; Eshun, E.; Hussain, Raihan; Jordan, D.; Onge, S. St; Dunn, J.

doi:10.1109/bipol.2002.1042917

Cited by 9 publications

(2 citation statements)

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“…Devices with intermediate breakdown may be used in mixers or other IF circuitry. Typically a local collector mask and implant step is used to create the appropriate collector doping profile for each BV CEO target NPN lower than the highest breakdown device supported in the process technology, or other implants in the technology are shared to support an additional voltage node [2].…”

Section: Introductionmentioning

confidence: 99%

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Hurwitz¹,

Preisler²,

Racanelli³

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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An alternate local collector masking scheme is demonstrated in 0.18µm SiGe BiCMOS technology. The method relies on a resist post in the emitter window to create a set of tunable breakdown devices with a single masking step.In initial experiments we have produced a continuum of devices with f T between 31 and 74GHz. The f T × BV CEO product and f MAX of these devices is comparable to those produced with traditional local collector implementation. The method could be combined with a collector-doping scalable model to provide additional design flexibility with minimal manufacturing costs. TCAD simulations are employed to study the use of high energies and tilt angle implants to partially penetrate the LC resist post over the emitter window. This alternative relaxes the lithography requirements of the LC post and supports its use with smaller emitter geometries.

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Section: Introductionmentioning

confidence: 99%

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Hurwitz¹,

Preisler²,

Racanelli³

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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show abstract

“…Also in BiCMOS processes, advantage is taken from these technology features to this day [1][2][3]. On the other hand, a lot of work was done worldwide to develop simplified BiCMOS processes [4][5][6][7][8]. While previously the main focus was on cost-effective solutions with medium performance, now both top bipolar performance and minimum cost are on the agenda.…”

Section: Introductionmentioning

confidence: 99%

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Heinemann

Barth

Knoll

et al. 2006

Semicond. Sci. Technol.

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A 0.25 µm SiGe:C BiCMOS technology family (SG25H) with high-speed npn and pnp transistors for different performance requirements is presented. A CMOS-friendly integration scheme is realized by using collector wells, implanted after shallow trench formation, and avoiding deep trenches and extra collector sinkers. Three process variants are offered. The key bipolar transistor of the SG25H1 process is a 200 GHz npn device. The SG25H3 process offers three different types of npn HBTs. The performance ranges from f T /f max /BV CEo values of 110 GHz/180 GHz/2.3 V for the high-speed (HS) device to 50 GHz/140 GHz/4.5 V for the medium voltage (MV) device and 30 GHz/80 GHz/6.5 V for the high-voltage (HV) transistor. The SG25H2 process provides in addition to npn transistors similar to those of SG25H1 and H3 a very high-speed SiGe:C pnp HBT with f T /f max /BV CEo values of 90 GHz/120 GHz/2.8 V.

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Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

Knoll

Дмитриев

Egorova

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Cited by 9 publications

References 0 publications

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Integration of SiGe NPN devices with tunable collector profiles using a single mask

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

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High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Cited by 9 publications

References 0 publications

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Integration of SiGe NPN devices with tunable collector profiles using a single mask

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Low-cost, high-voltage SiGe:C HBTs for a 0.18 &#x03BC;m BiCMOS Process

Contact Info

Product

Resources

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Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process