High-Performance InP PIC Technology Development based on a Generic Photonic Integration Foundry

Soares, Francisco; Baier, Moritz; Gaertner, Tom; Feyer, Mike; Möhrle, Martin G.; Grote, N.; Schell, Martin

doi:10.1364/ofc.2018.m3f.3

Cited by 21 publications

(13 citation statements)

References 5 publications

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“…trivial [11] [12]. SOAs have also been developed on the III-V-on-silicon platform, both using direct die-to-wafer bonding and divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive die-to-wafer bonding.…”

mentioning

confidence: 99%

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Gasse¹,

Wang²,

Roelkens³

2019

Opt. Express

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Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and highoutput-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm 2 (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.

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mentioning

confidence: 99%

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Gasse¹,

Wang²,

Roelkens³

2019

Opt. Express

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“…While the EML devices addressed in sect. 3 rely on dedicated layer structures -adapted to O-, C-and L-band operation, respectively -, the previous PIC devices were realized on a generic monolithic integration platform that has been developed at HHI over the past years [14]. Building on semi-insulating InP substrate (currently 3-in.)…”

Section: Pic Foundry Platformmentioning

confidence: 99%

Integrated transmitter devices on InP exploiting electro-absorption modulation

Baier¹,

Grote²,

Moehrle³

et al. 2020

PhotoniX

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InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a singlemode laser diode and an electro-absorption modulator. Using a so-called identicallayer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.

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“…To demonstrate the setup capabilities, we give experimental results that are obtained from integrated devices in indium phosphide (InP). They are fabricated in our generic integration technology [13,14]. The devices are already published elsewhere [15,16], but here we pay special attention to the Müller matrix properties.…”

Section: Pic Characterizationmentioning

confidence: 99%

Polarimetry for Photonic Integrated Circuits

et al. 2019

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Photonic integrated circuits (PICs) play a key role in a wide range of applications. Very often, the performance of PICs depends strongly on the state of polarization of light. Classically, this is regarded as undesirable, but more and more applications emerge that make explicit use of polarization dependence. In either case, the characterization of the polarization properties of a PIC can be a nontrivial task. We present a way of characterizing PICs in terms of their full Müller matrix, yielding a complete picture of their polarization properties. The approach is demonstrated by carrying out measurements of fabricated PICs.

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High-Performance InP PIC Technology Development based on a Generic Photonic Integration Foundry

Cited by 21 publications

References 5 publications

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Integrated transmitter devices on InP exploiting electro-absorption modulation

Polarimetry for Photonic Integrated Circuits

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