High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode

A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.

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High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode

Cited by 2 publications

References 12 publications

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

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