High Performance InGaAs/InP Single-Photon Avalanche Diode Using DBR-Metal Reflector and Backside Micro-Lens

Zhang, Bojian; Yin, Shunzheng; Liu, Yingjian; Jiang, Zhen; He, Wei‐Ming; Li, Qingwei; Hao, Jiawen; Wang, Liang

doi:10.1109/jlt.2022.3153455

Cited by 10 publications

(1 citation statement)

References 30 publications

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“…Furthermore, the single-photon detection efficiency (PDE) of conventional InGaAs/InP SPADs depends on both avalanche probability and external quantum efficiency. Even with optimized structures, such as thick InGaAs absorber layer [26] , back-incidence with the reflection layer [27] , DBR-metal reflector [28] , a selective area growth (SAG) method [29] , InGaAs/InP SPAD could have very good external quantum up to 90% or higher in both communication bands of 1550 nm and 1310 nm effectiveness. The avalanche probability (AP) is inherently limited by the probability distribution of the gain in the collision ionization process.…”

Section: Introductionmentioning

confidence: 99%

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K

He¹,

Yang²,

Tang³

et al. 2022

J. Semicond.

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Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication. However, even with well-designed structures and well-controlled operational conditions, the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche process and the growth quality of InGaAs/InP materials. It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present. In this paper, we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer. The quantum efficiency of this device reaches 83.2%. We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinusoidal pulse gating. The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination, and the detection of small avalanche pulse amplitude signal is realized. The maximum detection efficiency is 55.4% with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96 × 10−17 W/Hz1/2 at 247 K. Compared with other reported detectors, this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.

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Section: Introductionmentioning

confidence: 99%