2019
DOI: 10.1039/c9na00592g
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High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

Abstract: High performance indium oxide nanoribbon FETs: mitigating device-to-device signal variation in the subthreshold regime.

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Cited by 6 publications
(9 citation statements)
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“…The indium oxide nanoribbon FET sensors were fabricated as previously described and integrated within the 3D-printed fluidic device. 5,6 All FET measurements were performed using a Keysight Precision Source/Measure Unit B2900A Series (Keysight Technologies, USA). The data were recorded and…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
See 1 more Smart Citation
“…The indium oxide nanoribbon FET sensors were fabricated as previously described and integrated within the 3D-printed fluidic device. 5,6 All FET measurements were performed using a Keysight Precision Source/Measure Unit B2900A Series (Keysight Technologies, USA). The data were recorded and…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
“…Advances in biosensing technologies are paving the way to the feasibility of performing advanced bioanalytical assays in PoC settings. Among the various biosensing technologies relevant to PoC testing, label-free electrical biosensors, especially those based on nanoscale field-effect transistors (FETs), present significant advantages including ultrahigh sensitivity (typically in the sub-picomolar range), , fast and quantitative measurement capability (in the order of minutes), direct signal transduction, low power consumption, and compatibility with the multiplexed analyte measurement as well as on-chip sample processing and integration. These features suggest the feasibility of FET sensor-based PoC testing with high diagnostic accuracy, reduced complexity, increased portability, and acceptable cost. , …”
Section: Introductionmentioning
confidence: 99%
“…Indium (III) oxide (In 2 O 3 ) and tin-doped indium oxide (ITO) have been addressed as an interested field recently [ 283 , 284 , 285 ]. Both the In 2 O 3 and ITO materials exhibit metal-like behaviors.…”
Section: Other Fetsmentioning
confidence: 99%
“…FET NW-based sensors have attracted attention in chemical and biological sensing due to their high sensitivity, capability for direct (label-free) signal transduction and point-of-care integration . Semiconducting metal oxides, especially In 2 O 3 , ZnO, β-Bi 2 O 3 and ITO, have been widely studied as FET sensors.…”
Section: Metal Oxidesmentioning
confidence: 99%
“…FET NW-based sensors have attracted attention in chemical and biological sensing due to their high sensitivity, capability for direct (label-free) signal transduction and point-of-care integration. 207 Semiconducting metal oxides, especially In 2 O 3 , ZnO, β-Bi 2 O 3 and ITO, have been widely studied as FET sensors. Recent work has focused on improving device performance and more scalable fabrication, such as the use of chemical lift-off lithography, shadow mask patterning, and photochemical activation with UV light.…”
Section: ■ Metal Oxidesmentioning
confidence: 99%