High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Abstract

Solution-processed indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs) have become well known in recent decades for their promising commercial potential. However, the unsatisfactory performance of small-sized IGZO TFTs is limiting their applicability. To address this issue, this work introduces an interface engineering method of bi-functional acid modification to regulate the interfaces between electrodes and the channels of IGZO TFTs. This method increases the interface oxygen vacancy concentration and reduces the surface roughness, resulting in higher mobility and enhanced contact at the interfaces. The TFT devices thus treated display contact resistance reduction from 9.1 to 2.3 kΩmm, as measured by the gated four-probe method, as well as field-effect mobility increase from 1.5 to 4.5 cm 2 (V s) −1 . Additionally, a 12 × 12 organic light emitting diode display constructed using the acid modified IGZO TFTs as switching and driving elements demonstrate the applicability of these devices.

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

“…Metal-oxide semiconductors contain a metal cation (i.e., Zn, Cu, and Ni) [9,10] and an oxide anion, including ternary metal oxides, such as IZO [11], and quaternary metal oxides, such as IGZO [12]. Moreover, because conventional silicon-based transistors suffer from a limited form-factor, difficulty of the large-area process, and high-cost complex-to-fabricate process, metal oxide-based transistors have attracted interest for next-generation thin-film transistors (TFTs) in foldable, flexible, and stretchable displays and other electronic products [13][14][15].…”

High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

“…Thin film transistors (TFTs) based on metal oxide semiconductor (MOS) have attracted remarkable attention due to the intrinsic merits of high optical transparency and excellent electrical properties [1,2] . In the past few years, great endeavors have been made in the investigation of n-channel TFT with excellent performance.…”

“…In the past few years, great endeavors have been made in the investigation of n-channel TFT with excellent performance. However, the exploration on the p-type TFT is far beyond mature, the main obstacles for the rare research of p-type oxide are as follows: (1) there have been no efficient methods to synthesize high-quality p-type MOS; (2) the choices for p-channel MOS are limited, to the best of our knowledge, only CuxO [3,4] , SnO [5,6] , NiO [7] , CuMO2 (M = Al, Ga, or Cr) [8][9][10] and their mixtures [11,12] or laminates [13] have been reported to exhibit p-type conductivity.…”

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

“…49 Nevertheless, the main reason for using multi-components in the oxide system is to achieve a stable M-O network and to realize the high performance of amorphous metal oxide TFTs. [45][46][47][48][49] To develop oxide-based complementary metal-oxide-semiconductor (CMOS) circuits, high eld-effect mobility (m FE ) of ptype semiconductors is necessary. In a p-type MO semiconductor, the carrier conduction path is formed by anisotropic, localized O 2p orbitals in the valence band, leading to a large hole effective mass and low hole mobility (m h ).…”

“… 49 Nevertheless, the main reason for using multi-components in the oxide system is to achieve a stable M–O network and to realize the high performance of amorphous metal oxide TFTs. 45–49 …”