High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Fuchs, F.; Weimer, U.; Pletschen, W.; Schmitz, J.; Ahlswede, E.; Walther, M.; Wagner, J.; Koidl, P.

doi:10.1063/1.120551

Cited by 223 publications

(106 citation statements)

References 9 publications

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“…1 For example, superlattices consisting of thin alternating layers of InAs and GaSb may be suitable for long-wavelength infrared detectors. 2 In addition, resonant tunneling diodes based upon InAs/GaSb/AlSb heterostructures have been demonstrated. 3 The classic ''lattice-matched'' semiconductor system is GaAs/AlAs with a lattice mismatch of only 0.14%.…”

Section: ͓S0003-6951͑98͒02251-7͔mentioning

confidence: 99%

Strain relaxation in InAs/GaSb heterostructures

Bennett

1998

Applied Physics Letters

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Section: ͓S0003-6951͑98͒02251-7͔mentioning

confidence: 99%

Strain relaxation in InAs/GaSb heterostructures

Bennett

1998

Applied Physics Letters

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“…As proposed by Smith and Mailhiot [1] in 1987, several groups have shown single detector elements with excellent electro-optical properties, similar to established mercury-cadmium-telluride (HgCdTe) detectors [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

Rehm

Walther

Schmitz

et al. 2006

Opto-Electronics Review

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The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.

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“…As a result, multiple academic [1][2][3], industrial [4,5], and government groups [6][7][8][9] have researched these structures using molecular beam epitaxy (MBE). The original structures consisted of InAs/InGaSb [10], which were followed by gallium-free designs (InAs/InAsSb) [1]. Newer versions include InGaAs/InAsSb ternary SLS [11] and InAs/AlAs/AlSb/InAsSb W-structures [6,12].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

et al. 2016

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Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a result, the lattice constants of the substrate and superlattice are expected to change by approximately 0.3%, and at approximately the same rate. However, we present the first temperature-dependent X-ray diffraction (XRD) measurements of SLS material on GaSb and show that the superlattice does not contract in the same manner as the substrate. In both InAs/InAs 0.65 Sb 0.35 and In 0.8 Ga 0.2 As/InAs 0.65 Sb 0.35 SLS structures, the apparent out-of-plane strain states of the superlattices switch from tensile at deposition to compressive at operation. These changes have ramifications for material characterization, defect generation, carrier lifetime, and overall device performance of superlattices grown by MBE.

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High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Cited by 223 publications

References 9 publications

Strain relaxation in InAs/GaSb heterostructures

Strain relaxation in InAs/GaSb heterostructures

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

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