High performance, high yield InP DHBT production process for 40 Gbps applications

Sawdai, D.; Kaneshiro, E.; Gutierrez-Aitken, A.; Grossman, P.C.; Sato, Ken; Kim, W.; Leslie, G.; Eldredge, J.; Block, T.; Chin, P.; Tran, L.T.; Oki, A.K.; Streit, D.C.

doi:10.1109/iciprm.2001.929186

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A Technology Description and Device Performance1

Chip Fabrication and Test Results1

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Cited by 22 publications

(2 citation statements)

References 7 publications

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“…The 0.8 um emitter width InP DHBT production process utilizes an InP/InGaAs/InP HBT structure, and has Schottky diodes, 2-metal gold interconnect, two values of precision NiCr thin film resistors (TFR): 20 and 100 ohm/sq, two values of metal-insulator-metal (MIM) capacitors: 130 and 430 pF/mm 2 , and 75 um final substrate thickness with backside vias [2]. As shown in Fig.…”

Section: A Technology Description and Device Performancementioning

confidence: 99%

Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Gutierrez-Aitken

Monier

Chang

et al. 2009

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium

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Section: A Technology Description and Device Performancementioning

confidence: 99%

Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Gutierrez-Aitken

Monier

Chang

et al. 2009

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium

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“…Test chips of up to tenth order were fabricated in TRW's InP DHBT process [7]. This process provides an HBT fi of 150 GHz and the same passive components as the GaAs process.…”

Section: Chip Fabrication and Test Resultsmentioning

confidence: 99%

High dynamic range InP HBT delta-sigma analog-to-digital converters

Skones¹,

Cheng²,

Ching³

et al.

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

Jeng

Jagannathan

Rieh

et al. 2001

IEEE Electron Device Lett.

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A record 210-GHz SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/ m 2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 m technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz . The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

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High performance, high yield InP DHBT production process for 40 Gbps applications

Cited by 22 publications

References 7 publications

Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

High dynamic range InP HBT delta-sigma analog-to-digital converters

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

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