Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
DOI: 10.1109/iciprm.2001.929186
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High performance, high yield InP DHBT production process for 40 Gbps applications

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Cited by 22 publications
(2 citation statements)
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“…The 0.8 um emitter width InP DHBT production process utilizes an InP/InGaAs/InP HBT structure, and has Schottky diodes, 2-metal gold interconnect, two values of precision NiCr thin film resistors (TFR): 20 and 100 ohm/sq, two values of metal-insulator-metal (MIM) capacitors: 130 and 430 pF/mm 2 , and 75 um final substrate thickness with backside vias [2]. As shown in Fig.…”
Section: A Technology Description and Device Performancementioning
confidence: 99%
“…The 0.8 um emitter width InP DHBT production process utilizes an InP/InGaAs/InP HBT structure, and has Schottky diodes, 2-metal gold interconnect, two values of precision NiCr thin film resistors (TFR): 20 and 100 ohm/sq, two values of metal-insulator-metal (MIM) capacitors: 130 and 430 pF/mm 2 , and 75 um final substrate thickness with backside vias [2]. As shown in Fig.…”
Section: A Technology Description and Device Performancementioning
confidence: 99%
“…Test chips of up to tenth order were fabricated in TRW's InP DHBT process [7]. This process provides an HBT fi of 150 GHz and the same passive components as the GaAs process.…”
Section: Chip Fabrication and Test Resultsmentioning
confidence: 99%