High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters

Yang, Jun; Bhattacharya, P.; Mi, Zetian

doi:10.1109/ted.2007.906928

Cited by 119 publications

(96 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…15 More interestingly, these QDs are capable of bending or pinning the threading dislocations (TDs) because of their large strain field. 16,17 Recently, high performance electrically pumped continuous-wave InAs/GaAs QD lasers with an emission wavelength as long as 1315 nm have been directly grown on offcut silicon substrates, 11 yielding a low threshold current density of 62.5 A cm À2 , and an elevated operation temperature up to 120 C. These lasers have shown respectable operating lifetimes over 3100 h. To exploit the 1550 nm telecom wavelength where long-distance communication can benefit from the least attenuation, developing InP-based QD lasers on silicon is necessary. In this work, optically pumped subwavelength InAs/In(Al)GaAs quantum dot microdisk lasers (MDLs) epitaxially grown on CMOS-compatible (001) silicon emitting at 1.55 lm are reported.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

show abstract

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…As seen, before the DFL1, the density of threading dislocations is estimated to be ～5 × 10 (counted at position D). These observations indicate that, owing to the misfit strain that arises from adjacent layers, InAlAs/GaAs DFLs can effectively suppress/block the propagation of the threading dislocations by bending/redirecting the threading dislocations away from the growth plane [24,25]. And after the last set of DFL, i.e., DFL5, the average threading dislocation density has been significantly reduced to ～5 × 10 Atomic force microscopy (AFM), cross-sectional TEM and photoluminescent (PL) measurements were also carried out to characterize the structure and optical properties of InAs/GaAs QD laser structure directly grown on Si substrate using InAlAs/GaAs DFLs as shown in Figure 2 .…”

Section: Mbe Growth and Effect Of Inalas/gaas Slss On The Quality Of mentioning

confidence: 95%

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Chen

Tang

et al. 2015

Photonics

View full text Add to dashboard Cite

Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm 2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates. OPEN ACCESSPhotonics 2015, 2 647

show abstract

“…In these strain fields dislocations experience shear Peach-Koehler forces, which lead to a sideward deflection so that the dislocation is redirected towards the material edges or subjected to annihilation before reaching the surface (Figure 17(a)). Calculations based on continuum elasticity predict increasing effectiveness of a single QD layer to bend TDs with increasing QD base area, but only a weak increase with QD height [52]. Besides the QD base area, the dislocation bending effectiveness is enhanced by using a larger number of QD layers.…”

Section: Defect Filtering By Multiple Quantum Dot Layersmentioning

confidence: 99%

“…Moreover, misfit strain in the vicinity of the QD layer originates only from the misfit between the QD and the III-V layer material, and not additionally from misfit between different lower and upper layer materials. The defect blocking effect has been explained by a deflection of the defect propagation induced by the strain fields of the QDs [52,53]. In these strain fields dislocations experience shear Peach-Koehler forces, which lead to a sideward deflection so that the dislocation is redirected towards the material edges or subjected to annihilation before reaching the surface (Figure 17(a)).…”

Section: Defect Filtering By Multiple Quantum Dot Layersmentioning

confidence: 99%

“…Therefore, an optimum layer quality is expected for a QD size and number of QD layers just below the critical values for dislocation formation. For the Si/ GaAs system, Yang et al reported that a defect filter layer consisting of ten InAs QD layers with a QD width of 20-30 nm separated by 50 nm spacer layers on 2 μm GaAs buffer layer was most effective [52]. Their TEM analysis demonstrated that 60° dislocations were bent to the side (i.e.…”

Section: Defect Filtering By Multiple Quantum Dot Layersmentioning

confidence: 99%

See 1 more Smart Citation

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

View full text Add to dashboard Cite

In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

show abstract

High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters

Cited by 119 publications

References 34 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Contact Info

Product

Resources

About