High performance germanium-on-silicon detectors for optical communications

Famà, Silvia; Colace, Lorenzo; Masini, G.; Assanto, Gaetano; Luan, Hsin-Chiao

doi:10.1063/1.1496492

Cited by 164 publications

(75 citation statements)

References 7 publications

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“…Epitaxial germanium on silicon for photodetection by graded buffer layers [6,7], molecular beam epitaxy [8], a two-step growth by ultra-high vacuum chemical vapor deposition (UHVCVD) [9,10], and cyclic thermal annealing to reduce dislocation density in grown films were reported [11][12][13]. Metal-semiconductor-metal (MSM) and p-i-n type optical detectors were previously fabricated on blanket [3], and selective area grown germanium on silicon by MHAH technique are also reported earlier [5].…”

Section: Introductionmentioning

confidence: 99%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm 2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. for optical communications," Appl. Phys. Lett. 81(4), 586-588 (2002 ©2012 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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“…Furthermore, Ge has a lattice constant that is perfectly matched to gallium arsenide (GaAs) (0.07% at 300 K), which can be used as a buffer layer for integration of GaAs based devices on Si substrate. [1][2][3][4] One of the important parameters in determining the device worthiness of epitaxially deposited layers is the epilayers' threading dislocation density (TDD). Due to a large lattice mismatch between Ge and Si, a large number of misfit dislocations (MD) and TDD, on the order of 10 10 cm −2 , may be generated in the heterostructure when Ge is grown directly on Si substrate.…”

mentioning

confidence: 99%

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

et al. 2015

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A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.

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“…In an attempt to resolve challenge (i), germanium (Ge), which has a lattice constant perfectly matched to GaAs (0.07% at 300 K) and superior electron and hole mobility compared with Si, can be grown on Si to provide a buffer layer for integration and fabrication of GaAsbased devices on a Si substrate. [12][13][14][15] Since Ge and GaAs have diamond and zincblende structure, respectively, two possible sublattice allocations are possible for the GaAs layer, although they have exactly the same crystal structure. In one allocation, Ga atoms occupy the face-centered cubic (FCC) sublattice containing the cubic corners, whereas in the other allocation, As atoms occupy this FCC sublattice.…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Lee

Tan

Jandl

et al. 2013

Journal of Elec Materi

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The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0°and 6°offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6°offcut presents $65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0°offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6°offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6°offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6°offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.

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High performance germanium-on-silicon detectors for optical communications

Cited by 164 publications

References 7 publications

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

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