High performance gate drives for utilizing the IGBT in the active region

Githiari, A.N.; Leedham, R.J.; Palmer, P.R.

doi:10.1109/pesc.1996.548818

Cited by 25 publications

(6 citation statements)

References 6 publications

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“…In this case, the parameter design flow should be reversed, that is, first determine a proper P Rdynamic , then calculate C dynamic by (16), and, finally, use (15) to obtain R dynamic . This way, the calculated C dynamic may not satisfy (12) or (14), the insufficiency of the dynamic-state voltagebalancing effect would be compensated by the active-clamping subcircuit at the gate side of the HV-IGBT.…”

Section: B Dynamic-state Voltage-balancing Subcircuitmentioning

confidence: 99%

“…Some gate-side voltage-balancing techniques, such as master-slave control [8]- [10], reference voltage control [2], [11], [12], and active gate control [13]- [16], adopt more components to implement precise control on the gate current or gate voltage for better voltage-balancing performances. The basic principle of these techniques is similar with that of the activeclamping circuit.…”

Section: Introductionmentioning

confidence: 99%

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Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Lü

Zhao

et al. 2014

IEEE Trans. on Ind. Applicat.

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Although the maximum collector-emitter voltage of a high-voltage insulated-gate bipolar transistor (HV-IGBT) reaches 3300 V or higher, it still cannot satisfy the requirements of some high-voltage high-power converters. Applying power semiconductor devices in series connection can effectively improve the voltage rating and power rating of a power electronic converter.The key issue of device series connection is voltage balancing in static switching state and dynamic switching state. In this paper, a three-level converter based on series-connected HV-IGBTs is presented, its voltage-balancing subcircuits are analyzed, and the parameter design method for the converter is proposed. During the design process, key performance indexes of the series connection circuit, such as the voltage-balancing effect, loss of the voltage-balancing circuit, switching loss, and switching time, are comprehensively considered. Moreover, component parameters of the three-level converter are calculated considering the influence of the voltage-balancing circuit. The proposed parameter design method is applied in the development of a three-level HV-IGBT (4500 V/600 A) series connection test platform with 10 000-V rated dc-link voltage. Experimental results verify the validity of the proposed method.Index Terms-High-voltage insulated-gate bipolar transistor (HV-IGBT), parameter design, series connection, three level, voltage balancing.

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Section: B Dynamic-state Voltage-balancing Subcircuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Lü

Zhao

et al. 2014

IEEE Trans. on Ind. Applicat.

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“…The differences between individual IGBTs in the same switch may result in unmatched switching transients. Various methods have been proposed to improve voltage sharing and overcome differences between series IGBTs, and these methods vary in their sophistication and accuracy [1]- [6]. Seriesing methods may be classified as load side and gate side; the load side methods mainly rely on snubbers to achieve voltage sharing, whilst the gate side methods rely on the IGBT gate drive to control its switching transitions.…”

Section: Introductionmentioning

confidence: 99%

Parameters influencing the performance of an IGBT gate drive

Abu-Khaizaran

Palmer

Wang

2008

2008 IEEE Power Electronics Specialists Conference

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This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice.

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“…This study, however, was only for turn-off operation, and it was difficult to obtain optimized switching characteristics between the overvoltage and the turn-off energy loss at nominal current levels. The IGBT has been used in the active region at turn-off by using a closed-loop high-speed operational amplifier in the gate circuit [4]. In this case, the turn-off can be precisely controlled according to the reference voltage command.…”

Section: Introductionmentioning

confidence: 99%

High-performance active gate drive for high-power IGBT's

John

Suh

Lipo

1999

IEEE Trans. on Ind. Applicat.

127

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Abstract-This paper deals with an active gate drive (AGD) technology for high-power insulated gate bipolar transistors (IGBT's). It is based on an optimal combination of several requirements necessary for good switching performance under hard-switching conditions. The scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast drive requirements for high-speed switching and low switching energy loss. The gate drive can also effectively dampen oscillations during low-current turn-on transient in the IGBT. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage AGD technique can be an effective solution.Index Terms-Active gate drive, gate drive circuit, gate resistor, insulated gate bipolar transistor switching transient.

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High performance gate drives for utilizing the IGBT in the active region

Cited by 25 publications

References 6 publications

Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Parameters influencing the performance of an IGBT gate drive

High-performance active gate drive for high-power IGBT's

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