High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Zhang, Yachao; Dong, Yaolong; Chen, Kai; Dang, Kui; Yao, Yixin; Wang, Baiqi; Ma, Jinbang; Liu, Wenjun; Wang, Xing; Zhang, Jincheng; Hao, Yue

doi:10.1063/5.0134633

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…14 They have become the focal point in condensed matter and materials research owing to their distinctive structural properties compared to traditional semiconductors. Notably, investigating 2D GaN and AlN materials as representatives of new-generation wide-bandgap semiconductor materials has become a hot topic, 15–18 exhibiting excellent characteristics for diverse applications.…”

Section: Introductionmentioning

confidence: 99%

A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant

Li,

Zhou,

Liu

et al. 2024

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant

Li,

Zhou,

Liu

et al. 2024

Phys. Chem. Chem. Phys.

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Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Zhang,

Zhu,

Liu

et al. 2024

Applied Physics Letters

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The influence of external strain on the gate leakage current of AlGaN/GaN high-electron-mobility transistors was studied. The magnitude of the leakage current increased by 39% under 0.1% tensile strain but decreased by 23% under −0.1% compressive strain. The leakage current obeyed the Poole–Frenkel conduction mechanism, demonstrating a decrease/increase in the barrier height for electron emission from the trap state into the continuum dislocation state. Furthermore, the magnitude of critical reverse stressing voltage for the onset of degradation induced by the inverse piezoelectric effect became lower/higher under tensile/compressive strain compared with that of the initial state, which was attributed to the modification of the total stress in the film. In addition, using the transient current method, it was established that the detrapping time constant for the traps in the AlGaN barrier increased as a result of the tensile strain, which is ascribed to movement of the dislocation level away from the conduction band.

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Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Papamichail,

Persson,

Richter

et al. 2024

Applied Physics Letters

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Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the precise composition control is very challenging. In this work, we investigate the compositional profiles of AlxGa1−xN/GaN HEMT structures with targeted Al content in the barrier layer, x = 0.50, 0.70, and 1, and thickness in the sub-10 nm range in correlation with the two-dimensional electron gas (2DEG) properties. The HEMT structures are grown by metal-organic chemical vapor deposition on SiC. The maximum Al content in the barrier layer, experimentally determined by scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, is found to be lower than that intended and the deviations from the designed structures increase progressively with increasing x. Compositionally sharp interface between GaN and Al0.46Ga0.54N and box-like Al profile is achieved for intended x∼0.50 while pronounced Al grading is found in the samples with intended x of 0.70 and 1, with a maximum Al content of 0.78 reached for the HEMT structure with intended AlN barrier layer. The impact of the experimentally determined Al profiles on the 2DEG properties, obtained by contactless and electrical Hall effect measurements and coupled with self-consistent solution of the Poisson–Schrödinger equation, is evaluated and discussed. It is shown that the observed deviations from the intended Al profiles have a negative effect on the 2DEG confinement and result in reduced mobility parameters, which have significant implications for the implementation of high-Al content AlGaN/GaN structures in high-frequency devices.

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High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Cited by 3 publications

References 34 publications

A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant

A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

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High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Cited by 3 publications

References 34 publications

A wide-bandgap graphene-like structure C6BN with ultra-low dielectric constant

A wide-bandgap graphene-like structure C6BN with ultra-low dielectric constant

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

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A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant

A wide-bandgap graphene-like structure C₆BN with ultra-low dielectric constant