High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration

A novel method to determine equivalent circuits for MMIC plastic packages using electromagnetic field simulation

“…The equivalent circuit at the off state is shown in Figure 2(b). It had been confirmed that this circuit represents the off status accurately [4]. The MESFET was mounted in the SO8 package used for the simulation, as shown in Figure 2(c>.…”

A 2.45GHz CMOS PA+T/R switch for wireless communication

“…In receive mode, the isolation is only 15dB, as there's no discharge path for power amplifier. Figure 3.6 shows a typical T/R switch implementation using GaAs MESFET depletion mode transistors [45]. The basic operation is as follows: [45] Under realistic conditions, GaAs MESFETs are not perfect on-off switches but can be modeled as having a finite on-resistance (R on ) when conducting and a finite off-capacitance (C off ) when cut-off.…”

A high-performance and miniaturized dual-use (antenna/local) GaAs SPDT switch IC operating at +3 V/0 V

“…This technique enabled us to develop antenna switch ICs for 01-3 V and +3/0 V operation [3]. B. Compacvhigh isolation technique: By using electromagnetic field simulations, we were able to develop a local switch IC with isolation characteristics of 30 dB using a ultra-compact plastic package (called CP6: Chip Pack a which was 1/4th the size of conventional 8-pin package(S08).…”