High performance GaAs power diodes

Voitovich, Viktor; Rang, Toomas; Rang, G.; Pikkov, Mihhail

doi:10.1109/bec.2008.4657490

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…The analysis of the literature data shows [1,13,[16][17][18][19] that the production of lightly doped GaAs layers and the formation of high-voltage p-n junctions in the process of growth have not been clarified, the nature of residual impurities is not entirely clear, the influence of technological factors on the electrical properties has not been studied, which makes it difficult to create high-voltage switches with subnano-and picosecond speed.…”

Section: Methodsmentioning

confidence: 99%

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Development of technology for creating high-voltage p0–n0 junctions based on GaAs

Sultanov,

Abdukarimov,

Kufian

2023

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An optimal solution has been found to the problem of obtaining p0-n0 junctions based on lightly doped GaAs layers with high values of electrical parameters and specified thicknesses of base layers to create ultra-fast high-voltage pulsed three-electrode switches with a photon injection mechanism of minority charge carriers. A technology has been developed for the formation of high-voltage, powerful subnano-second photonic injection switches based on gallium arsenide and its solid solutions. The dependence of the current rise time, switching voltage and switching stability relative to the control pulse of high-voltage photonic injection switches in a wide current and frequency mode of their operation, its sensitivity to various external influences, as well as dependence on the thickness of the p0-layer, on the transmission coefficient, on breakdown voltage Uprobe of the high-voltage p0-n0 junction. The carried out studies and the obtained results indicate the prospects of using the developed high-voltage pulsed semiconductor devices in picosecond optoelectronics for pumping high-power laser and LED structures.

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Section: Methodsmentioning

confidence: 99%

“…In addition, this method has the following advantages over gas-transport and molecular epitaxy: simplicity of equipment, higher growth rates, the possibility of reducing the impurity background, etc. The physicochemical foundations of LPE are well described in a number of monographs [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Development of technology for creating high-voltage p0–n0 junctions based on GaAs

Sultanov,

Abdukarimov,

Kufian

2023

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“…1 shows the analysed structure geometry taken from [11,13]. GaAs Diode Geometry [11] and doping profile.…”

Section: The Problemmentioning

confidence: 99%

Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structures

Koel¹,

Rang²,

Rang³

2014

WIT Transactions on Engineering Sciences

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Power semiconductor devices are facing different failure mechanisms which limit the safe operating area of these devices. Two different mechanisms influence the thermal behaviour of power devices, first the ambient temperature, and secondly self-heating phenomenon described traditionally over the lattice thermal behaviour model. It is demonstrated in different published materials how the device internal processes can be investigated by means of device numerical simulation procedure. In our paper we focus on the numerical analysis of GaAs based power pin structures applied for detection of anomalies in the switching process of devices taking into account the influence of ambient temperature amplified by the self-heating phenomenon introduced over the lattice thermal model. Due to the fact that the switch-off of power diode structures is one of most critical acts in different power converters, like for example DC/DC converters, we put our focus on the exact thermal description of the devices under the switching process. Special effort has been taken for the situations, where during the switching process the total thermal situation leads the device close to the thermal breakdown instead of normal electrical breakdown. The influence of current crowding plasma generation near the metallic contacts seems to take place. The smooth snappy switching characteristics behaviour and it's mechanism under the temperature influence is simulated and the results are presented. Examples on current destabilizing effects in the switching process and the limitations of switching current detected from the device simulation are discussed.

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Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes

Koel¹,

Rang²,

Voitovich³

et al. 2012

2012 13th Biennial Baltic Electronics Conference

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High performance GaAs power diodes

Cited by 4 publications

References 7 publications

Development of technology for creating high-voltage p0–n0 junctions based on GaAs

Development of technology for creating high-voltage p0–n0 junctions based on GaAs

Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structures

Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes

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