High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS₂ van der Waals Heterostructure

Abstract

This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS2 channel, and GaS gate insulator. The transistor exhibits a subthreshold swing of 63 mV/dec, an on/off ratio over 106 within a gate voltage of 0.4 V, and peak mobility of 83 cm2/(V s) at room temperature. The low-frequency noise characteristics were investigated and described by the Hooge mobility fluctuation model. The results suggest that the van der Waals heterostructure of 2D semiconductors can produce a high-performing interface without dangling bonds and defects caused by lattice mismatch. Furthermore, a logic inverter and a NAND gate are demonstrated, with an inverter voltage gain of 14.5, which is higher than previously reported by MoS2-based transistors with oxide dielectrics. Therefore, this transistor based on van der Waals heterostructure exhibits considerable potential in digital logic applications with low-power integrated circuits.

Natural 2D layered mineral cannizzarite with anisotropic optical responses

“…The optical properties of vdW heterostructures can be easily tailored by the stacking symmetries and strategies of individual 2D material layers, which provides the opportunity of achieving diverse functionalities beyond the reach of each individual layer. Over the last decade, the fabrication of vdW heterostructures has advanced the reach of layered vdW materials to realize ultracompact photonic and optoelectronic devices covering a broad spectral range from visible to mid-IR for optical communication and sensing 19 , transistors 20 , 21 , photodetectors 22 – 24 and ultrafast lasers 25 . Widely used methods for the fabrication of vdW heterostructures include layer-by-layer sequential chemical synthesis and mechanical restacking of individual materials 25 – 30 .…”

Properties, Synthesis, and Device Applications of 2D Layered InSe

“…Since most 2D materials, including MoS 2 , MoTe 2, and BP, only possessed a low field‐effect mobility ceiling of a few hundred cm 2 V −1 s −1 , [ 226–234 ] as shown in Table 5 , the FETs were failure to apply in high‐frequency electronic devices. While InSe FETs possessed an ultrahigh on/off ratio and excellent mobility, which suggested the FETs can operate at a higher frequency and improve switching speed.…”

Wafer‐scale vertical van der Waals heterostructures

“…FET based on vdWHs is the ideal component for logic circuit with high gain because of its high‐performance and hysteresis‐free nature 151,152 . Owing to the various vdWH devices configuration available, 153,154 a series of novel functional logic circuits were fabricated, 6,155 such as high gain logic inverters based on GaS/MoS 2 thin film transistors (TFT), 156 multivalued logic circuits based on band to band tunneling WSe 2 /MoS 2 FETs, 157 and tunable ternary inverters based on BP/MoS 2 FETs 158 . Besides, optimizing the geometries of the vdWH devices can also effectively tune the performances of logic circuits and manufacture tunable logic devices 157,158 …”