High‐Performance Ferroelectric–Dielectric Multilayered Thin Films for Energy Storage Capacitors

Abstract

Herein, the effect of the insertion of a thin dielectric HfO2:Al2O3 (HAO) layer at different positions in the Pt/0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/Au structure on the energy storage performance of the capacitors is investigated. A high storage performance is achieved through the insertion of a HAO layer between BCZT and Au layers. The insertion of the dielectric layer causes a depolarization field which results in a high linearity hysteresis loop with low energy dissipation. The Pt/BCZT/HAO/Au capacitors show an impressive energy storage density of 99.8 J cm−3 and efficiency of 71.0%, at an applied electric field of 750 kV cm−1. Further, no significant change in the energy storage properties is observed after passing 108 switching cycles through the capacitor. The presence of resistive switching (RS) in leakage current characteristics confirms the strong charge coupling between ferroelectric and insulator layers. The same trend of the RS ratio and the energy storage performance with the variation of the architecture of the devices suggests that the energy storage properties can be improved through the charge coupling between the layers. By combining ferroelectrics and dielectrics into one single structure, the proposed strategy provides an efficient way for developing highly efficient energy storage capacitors.

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

“…In this context, RFE films of 0.25BiFeO 3 –0.3BaTiO 3 –0.45SrTiO 3 and Ba­(Zr 0.2 Ti 0.8 )­O 3 can exhibit ESD and efficiency values of >110 J cm –3 and ∼80–90%, as shown in Table . − This is attributed to the elimination of the macroscopic domain walls and the formation of polymorphic nanodomains. The highest ES performance in RFE films was achieved for films with a thickness of ≥350 nm, which limits the miniaturization of the devices.…”

First-Principles Study of n*AlN/n*ScN Superlattices with High Dielectric Capacity for Energy Storage

“…The present first-principles calculations demonstrate that the n*AlN/n*ScN superlattices (n ≤ 3) are excellent nonlinear dielectrics of energy storage with the highest energy density approaching 304 J/cm 3 by far exceeding the current supercapacitor materials realized in the experiments, as shown in Table 2. Nitrogen-Thiol-rGO Scrolls [34] 215 Nitrogen-doped thiol-functionalization Pt(111)/Ti/SiO2/Si [35] 99.8 Solid-state reaction rGO-based EDLC [36] 142 Hydrazine reduction Nitrogen-Thiol-rGO Scrolls [34] 215 Nitrogen-doped thiol-functionalization Pt(111)/Ti/SiO 2 /Si [35] 99.8 Solid-state reaction rGO-based EDLC [36] 142 Hydrazine reduction…”

Dielectric and Energy Storage Properties of Ba(1−x)CaxZryTi(1−y)O3 (BCZT): A Review

“…José P. B et al investigated the effect of thin dielectric layer of HfO 2 :Al 2 O 3 (HAO) on the energy storage properties in the Pt/0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 structure. Energy density of Pt/BCZT/HAO/ Au capacitors was found to be 99.8 J cm −3 and efficiency was 71.0% [89]. K. Mimura et al fabricated BZT and BCZT thin films on Pt/TiOx/SiO 2 /Si substrates.…”