High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

Abstract

transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe 2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe 2 flakes were stacked on doped WSe 2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe 2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe 2 FETs. The doped WSe 2 /TaSe 2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ•μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.