High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

Twynam, J.K.; Sato, H.; Kinosada, T.

doi:10.1049/el:19910092

Cited by 22 publications

(2 citation statements)

References 5 publications

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“…This causes the p-n junction to move into the AlGaAs layer and the current gain of the device is reduced due to the reduction in the barrier to hole injection. Using carbon doping in the base (p = 4 × 10 19 cm −3 ), Twynam et al [1991] have reported MOCVD-grown AlGaAs/GaAs microwave HBTs with an f T of 42 GHz, f max of 117 GHz and a current gain of 50. Common p-type dopants in MOCVD are magnesium, zinc and carbon.…”

Section: The Mocvd Challengementioning

confidence: 99%

Growth and Characterization of the GaInP–GaAs System

2010

The MOCVD Challenge

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Section: The Mocvd Challengementioning

confidence: 99%

Growth and Characterization of the GaInP–GaAs System

2010

The MOCVD Challenge

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“…This quantum efficiency depends mainly on the HBT electrode structure. The CE/CBHBT emitters are both 3 x 20 pm X 1 of nonself-alignment type, but, because the metalcontact layouts of the electrodes is different, the quantum efficiency also is different [20]. electrode 2 X 10 pm X 4), 40 percent quantum efficiency was achieved.…”

Section: Characteristics Of the Gaashbt And Inp/mentioning

confidence: 99%

Fiber‐optic millimeter‐wave subcarrier transmission links using HBTs as photodetectors

Suematsu¹,

Imai²

1995

Electron Comm Jpn Pt II

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The authors utilized monolithic microwave integrated circuits (MMIC) compatible devices, GaAs HBT and InP/InGaAs HBT, as photodetectors for a fiber‐optic/millimeter‐wave subcarrier link, and investigated the link loss characteristics, subcarrier‐to‐noise ratio (SNR) characteristics, and IM3 characteristics of the fiber‐optic millimeter‐wave subcarrier link, comparing them with those of the link using a pin photodiode. The link gain characteristics are compared with those of the links which use other MMIC compatible photodetectors (MSM and HEMT) and pin photodetectors (pin‐PD). It is found that for both the common emitter HBT link and the common‐base HBT link, good response and flat frequency characteristics can be seen over several gigahertz in the millimeter‐wave band. The SNR characteristics of the common emitter HBT link governs the noise characteristics of the optical/RF transducer in the low‐frequency region where there is internal gain. However, in the millimeter‐wave region (where there is no gain), it is dependent on the noise characteristics of the LNA connected after the HBT or in the common base HBT link. The input/output characteristics and IM3 characteristics of the HBT link are dependent on the power characteristics of the external optical modulator (EOM) when the optical power is less than ‐ 3 dBm. An optical/RF transducer combining an HBT photodetector, LNA, and horn antenna is designed. Using this optical/RF transducer, an optical fiber/millimeter‐wave radio link is designed and the FM video transmission characteristics are investigated experimentally. It is shown that this link was effective at wavelengths of 0.83 μm and 1.3 μm.

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Transistors

Fundamentals of Solid State Engineering

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High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

Cited by 22 publications

References 5 publications

Growth and Characterization of the GaInP–GaAs System

Growth and Characterization of the GaInP–GaAs System

Fiber‐optic millimeter‐wave subcarrier transmission links using HBTs as photodetectors

Transistors

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