1991
DOI: 10.1049/el:19910092
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High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

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Cited by 22 publications
(2 citation statements)
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“…This causes the p-n junction to move into the AlGaAs layer and the current gain of the device is reduced due to the reduction in the barrier to hole injection. Using carbon doping in the base (p = 4 × 10 19 cm −3 ), Twynam et al [1991] have reported MOCVD-grown AlGaAs/GaAs microwave HBTs with an f T of 42 GHz, f max of 117 GHz and a current gain of 50. Common p-type dopants in MOCVD are magnesium, zinc and carbon.…”
Section: The Mocvd Challengementioning
confidence: 99%
“…This causes the p-n junction to move into the AlGaAs layer and the current gain of the device is reduced due to the reduction in the barrier to hole injection. Using carbon doping in the base (p = 4 × 10 19 cm −3 ), Twynam et al [1991] have reported MOCVD-grown AlGaAs/GaAs microwave HBTs with an f T of 42 GHz, f max of 117 GHz and a current gain of 50. Common p-type dopants in MOCVD are magnesium, zinc and carbon.…”
Section: The Mocvd Challengementioning
confidence: 99%
“…This quantum efficiency depends mainly on the HBT electrode structure. The CE/CBHBT emitters are both 3 x 20 pm X 1 of nonself-alignment type, but, because the metalcontact layouts of the electrodes is different, the quantum efficiency also is different [20]. electrode 2 X 10 pm X 4), 40 percent quantum efficiency was achieved.…”
Section: Characteristics Of the Gaashbt And Inp/mentioning
confidence: 99%