2001
DOI: 10.1109/16.925226
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High-performance bottom electrode organic thin-film transistors

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Cited by 299 publications
(176 citation statements)
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“…High-resolution devices are also difficult to fabricate because of the sensitivity of the semiconductors to resists, developers, and solvents used in most lithographic techniques for defining the source and drain (10,28). Bottom contact devices, on the other hand, are mechanically robust (they use semiconductor layers deposited on top of source͞drain electrodes that are strongly bonded to the dielectric) and they can be fabricated easily by depositing the semiconductor onto lithographically prepatterned electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…High-resolution devices are also difficult to fabricate because of the sensitivity of the semiconductors to resists, developers, and solvents used in most lithographic techniques for defining the source and drain (10,28). Bottom contact devices, on the other hand, are mechanically robust (they use semiconductor layers deposited on top of source͞drain electrodes that are strongly bonded to the dielectric) and they can be fabricated easily by depositing the semiconductor onto lithographically prepatterned electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…[ [23][24][25] Recent studies on metal/SAM/pentacene systems have shown that SAMs not only alter the alignment of the electronic energy levels at the interface, but also influence the morphology of the evaporated pentacene layers. [26][27][28][29] The presence of the SAM on the metal reduces the surface free energy and promotes the growth of pentacene layers with a standing-up orientation.…”
Section: Single-layer Pentacene Field-effect Transistors Using Electrmentioning
confidence: 99%
“…From fabrication point of view, bottom contact OTFT is preferred because in this design the soft organic semiconductor can be protected from harsh chemicals, high temperatures and metal penetration. However, usually bottom contact OTFT show inferior performance, the reasons for which is provided on the basis of large metal-semiconductor contact resistance, irregular deposition or poor morphology of the semiconductor films around the source and drain contacts (Kang et al, 2003;Kymissis et al, 2001;Koch et al, 2002;Lee et al 2006. In the bottom contact OTFT, it is possible that both the contact barrier and the structural inhomogenities in the semiconductor play important role in affecting the charge injection and transport characteristics.…”
Section: Effect Of Device Design Of Otftmentioning
confidence: 99%