2022
DOI: 10.1002/adom.202200319
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High‐Performance Blue Quantum‐Dot Light‐Emitting Diodes by Alleviating Electron Trapping

Abstract: of high-quality QDs, QLEDs have gained huge progress and the performance is comparable with that of state-of-the-art organic light-emitting diodes. Especially, the red and green QLEDs have delivered the external quantum efficiency (EQE) over 20% and operating lifetime up to a few millions of hours. [13,14] Currently, blue QLEDs become the short slab for the QLED-based display technology.The introduction of wide bandgap shells (such as ZnS), which help to confine the charges/excitons to the cores and to passiva… Show more

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Cited by 18 publications
(7 citation statements)
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“…Efforts have been made to address the unbalanced charge injection issue: these include the selection of appropriate hole transport layers with deep energy levels to match the valence band maximum (VBM) of the CdSe-based QDs and enhance hole injection, doping of the electron transport layer of ZnO nanocrystals with Mg 2+ ions to reduce electron mobility and increase the electron injection barrier, and the insertion of an ultrathin insulating layer to impede the electron injection. However, the increased electron injection barrier requires higher driving voltages to get the same luminance, meanwhile generating more heat that deteriorates the device. ,,, Tailoring the structure of the QDs offers another efficient way to achieve balanced charge injection, which is dominated by the semiconductor shell materials. A CdS shell has been widely used for its wide band gap which offers excellent surface passivation, leading to a near-unity photoluminescence quantum yield (PLQY) of CdSe/CdS QDs. Unfortunately, the low conduction band minimum (CBM) of CdS favors electron injection, while its deep VBM impedes hole injection, causing heavily unbalanced charge injection. ZnS and ZnSe (having a wider band gap than CdS) differ from each other in terms of CBM and VBM levels. ,, The shallower VBM of ZnSe compared to that of ZnS can enhance hole injection without impeding electron injection.…”
mentioning
confidence: 99%
“…Efforts have been made to address the unbalanced charge injection issue: these include the selection of appropriate hole transport layers with deep energy levels to match the valence band maximum (VBM) of the CdSe-based QDs and enhance hole injection, doping of the electron transport layer of ZnO nanocrystals with Mg 2+ ions to reduce electron mobility and increase the electron injection barrier, and the insertion of an ultrathin insulating layer to impede the electron injection. However, the increased electron injection barrier requires higher driving voltages to get the same luminance, meanwhile generating more heat that deteriorates the device. ,,, Tailoring the structure of the QDs offers another efficient way to achieve balanced charge injection, which is dominated by the semiconductor shell materials. A CdS shell has been widely used for its wide band gap which offers excellent surface passivation, leading to a near-unity photoluminescence quantum yield (PLQY) of CdSe/CdS QDs. Unfortunately, the low conduction band minimum (CBM) of CdS favors electron injection, while its deep VBM impedes hole injection, causing heavily unbalanced charge injection. ZnS and ZnSe (having a wider band gap than CdS) differ from each other in terms of CBM and VBM levels. ,, The shallower VBM of ZnSe compared to that of ZnS can enhance hole injection without impeding electron injection.…”
mentioning
confidence: 99%
“…[33][34][35][36] After years of great efforts, CdS, ZnS and InP based colloidal QDs become the mainstream luminous materials of QD-LEDs, which show over 20% external quantum efficiency (EQE) and an extremely long lifetime of a million hours for red, green and blue (RGB) devices. [37][38][39][40][41][42] But, the color gamut (Rec. 2020) display device based on colloidal QDs is always below 90% due to their inhomogeneous size and imperfect material quality.…”
Section: Introductionmentioning
confidence: 99%
“…Further, there are several possible loss mechanisms in QLEDs. Interfacial trap states in charge transporting layers (CTLs), [19][20][21] defect sites on QDs, [22][23][24][25] and charge injection imbalance [7,26] can reduce QLED performance. Non-radiative Auger recombination is considered the primary loss mechanism, which is caused by excess charge injection to QDs.…”
mentioning
confidence: 99%