Improving exciton utilization and reducing nonradiative
recombination
are the most effective methods for achieving excellent performance
in perovskite light-emitting diodes (PeLEDs). Although exciton utilization
can be enhanced through surface defect passivation or energy transfer
at interfaces, the role of energy transfer within the perovskite emissive
layer has not been fully understood due to the complex nature of exciton
recombination and decay dynamics. Here, we demonstrate a feasible
host–guest doping strategy using 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), which has high
triplet energy levels (T1), to enhance exciton utilization by effectively
facilitating energy transfer in the perovskite emission layer. The
N atoms of TPBi firmly bond to the perovskite through a coordination
bond and effectively stabilize the perovskite structure. In addition
to this, TPBi can also raise the electron mobility, increase the carrier
complex probability, and expand the carrier complex region. As a result,
the produced device of TPBi as host can achieve a maximum luminance
(L
max) of 61704 cd m–2 and a maximum external quantum efficiency (EQEmax) of
18.26%, as well as a 118.8% increase in the maximum EQE compared to
the undoped device. The EQE can maintain a low-efficiency roll-off
of 4.3% under 28,271 cd m–2. This study reveals
that the host–guest doping strategy provides a way for improving
the exciton management in PeLEDs.