High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation

Abstract

Herein, a selective passivation of p‐GaN via hydrogen plasma treatment for InGaN single‐quantum‐well (SQW) red light‐emitting diodes (LEDs) is reported. Insulating regions are formed on the p‐GaN top surface via hydrogen plasma treatment, suppressing current injection beneath the p‐pad and along the mesa perimeter to increase light output and mitigate non‐radiative recombination. The fabricated LEDs demonstrate a high on‐wafer light output power density of >88 mW cm−2, a peak on‐wafer external quantum efficiency of 0.65%, and on‐wafer wall‐plug efficiency of 0.41% with a 645 nm peak emission wavelength at 10 mA (7.2 A cm−2) current injection. Further, the temperature dependence of InGaN SQW red LEDs is compared with their AlGaInP counterparts. InGaN SQW red LEDs exhibit a high characteristic temperature of 208 K and a small redshift coefficient of 0.072 nm K−1 at 72 A cm−2 current injection, which are almost 3 and 2 times better than the characteristics of AlGaInP red LEDs, respectively.