High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric

Abstract

Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher energy efficiency, and compatibility with rapid prototyping compared to their counterparts fabricated through traditional semiconductor manufacturing processes. Unfortunately, solution‐processed transistors exhibit wide performance variability and low yield. In this work, a solution‐processed transparent indium gallium zinc oxide (IGZO) thin film transistor with a low temperature‐annealed hafnium oxide dielectric layer is described. Post‐annealing temperatures for the sol–gel hafnium dioxide thin film are reduced to below 200 °C, significantly expanding the range of substrates on which the metal oxide dielectric can be deposited. The fabricated devices exhibit excellent characteristics with high field‐effect mobilities of over 85 cm2 V−1 s−1, along with low subthreshold swing below 140 mV dec−1, high on/off ratios, and near‐zero threshold voltages when operating stably at low‐operating voltages of 2 V. The solution processed transparent hafnium dioxide gate dielectric IGZO transistors are shown to exhibit comparatively significantly lower device variation and high yield, allowing for the reproducible fabrication of large‐area and transparent solution processed microelectronics systems.

Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors

“…Its easy and cost-effective nature has gained popularity as a substitute for transistor fabrication. Furthermore, solution-based TFTs have shown good mobility, low subthreshold swing ( SS ), large on/off current, and good stability in recent reports. − However, despite advancements, solution-processed metal oxides still have issues with film quality due to defects, unlike their vacuum-processed counterparts. Sol–gel synthesis is the conventional route used to prepare solution precursors for forming amorphous oxide films, but it usually requires temperatures higher than 450 °C to form the metal oxide. − Thus, low-temperature processing methods were developed to decrease the fabrication temperature and make solution processing compatible with flexible substrates that have low melting points.…”

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

“…In contrast to conventional dielectric materials, metal oxide dielectric materials with high permittivity (k) can simultaneously guarantee large areal capacitance and low leakage current density, providing a viable way to lower the operating voltage and improve device performance. Currently, high-k metal oxide dielectric films (e.g., Al 2 O 3 [8,9], ZrO 2 [10,11] and HfO 2 [12,13], etc) prepared by various solution-processed methods such as spin coating or inkjet printing, are widely focused in both academic and industrial fields due to some advantages of simple process, high throughput manufacturing and cost-effectiveness.…”