High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results

Rao, Sandro; Mallemace, Elisa Demetra; Corte, Francesco G. Della

doi:10.3390/electronics11121839

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…Furthermore, the peak response wavelength can really be controlled by adjusting the thickness of the i layer [18]. In addition, the response speed of p-i-n PDs is higher even than p-n PDs because the majority of the photocurrent is generated in the i region with high electric field punched through to the N layer [19,20].…”

Section: Introductionmentioning

confidence: 99%

Study on SiC UV/EUV Coaxial Photodetector

Liang

Liu

et al. 2023

J. Phys.: Conf. Ser.

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In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.

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Section: Introductionmentioning

confidence: 99%

Study on SiC UV/EUV Coaxial Photodetector

Liang

Liu

et al. 2023

J. Phys.: Conf. Ser.

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“…To date, SiC has already been explored to make a variety of photonic devices, including light-emitting diodes (LEDs) 9 , 10 , photodiodes 11 , 12 and, more important, for the design and fabrication of integrated photonic circuits thanks to the possibility of realizing low-loss waveguides 13 leading to optically active devices, such as modulators 14 , 15 or micro-ring resonators 16 . SiC has been shown to be compatible with Silicon (Si) processing technology, which means that it can be integrated with other Si-based photonic devices and circuits 17 .…”

Section: Introductionmentioning

confidence: 99%

Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm

Rao

Mallemace

Faggio

et al. 2023

Sci Rep

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The design of semiconductor-based photonic devices requires precise knowledge of the refractive index of the optical materials, a not constant parameter over the operating temperature range. However, the variation of the refractive index with the temperature, the thermo-optic coefficient, is itself temperature-dependent. A precise characterization of the thermo-optic coefficient in a wide temperature range is therefore essential for the design of nonlinear optical devices, active and passive integrated photonic devices and, more in general, for the semiconductor technology explored at different wavelengths, from the visible domain to the infrared or ultraviolet spectrum. In this paper, after an accurate ellipsometric and micro-Raman spectroscopy characterization, the temperature dependence of the thermo-optic coefficient ($$\frac{\partial n}{\partial T}$$ ∂ n ∂ T ) for 4H-SiC and GaN in a wide range of temperature between room temperature to T = 500 K in the visible range spectrum, at a wavelength of λ = 632.8 nm, is experimentally evaluated. For this purpose, using the samples as a Fabry–Perot cavity, an interferometric technique is employed. The experimental results, for both semiconductors, show a linear dependence with a high determination coefficient, R2 of 0.9648 and 0.958, for 4H-SiC and GaN, respectively, in the considered temperature range.

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“…As a matter of fact, it must be recognized that SiC already has a relevant role in optoelectronics, at least as far as ultra-violet (UV) LEDs and photodetectors are concerned. To date, for example, some practical applications have been successfully demonstrated, such as ultraviolet (UV) photodetectors [1,2], optical sensors, or for integrated quantum and nonlinear photonics [3]. However, the optical communication arena still remains a rather unexplored field, although some notable results have been reported [4,5].…”

Section: Introductionmentioning

confidence: 99%

Accurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nm

Mallemace

Rao

Casalino

et al. 2023

MSF

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The growing interest for the use of 4H-SiC in photonics is triggering the interest for more accurate characterizations of this semiconductor from the optical and opto-electronic point of view. In this work we report about new measurements run on an undoped 4H-SiC substrate, finalized at determining the precise dependence of its refractive index on temperature in the visible spectrum, and precisely at the wavelength of λ=632.8 nm, in a temperature range from room temperature (RT) to 400K. Measurements are performed by exploiting the properties of a Fabry-Perot cavity interrogated with a laser beam. It is known that the transmitted radiation intensity shows fringes that shift with temperature and the refractive index. By precisely monitoring the transmitted signal, the thermo-optic coefficient dn/dT can be determined with a resolution that approaches 10-6 K-1.

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High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results

Cited by 7 publications

References 23 publications

Study on SiC UV/EUV Coaxial Photodetector

Study on SiC UV/EUV Coaxial Photodetector

Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm

Accurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nm

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