High-performance 1.3 [micro sign]m InGaAs vertical cavity surface emitting lasers

1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions

“…By using highly strained InGaAs quantum wells (QWs), VCSEL devices with singlemode emission up to 1.3-mm wavelength have been achieved [2]. In order to improve the single-mode performances of oxideconfined VCSELs rather complex fabrication processes are being explored, such as the anti-resonant reflecting optical waveguiding (ARROW) and the surface-relief etching techniques [3,4].…”

On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal–organic vapor-phase epitaxy

“…Highly strained InGaAs/GaAs quantum wells (QWs) are of great interest for vertical-cavity surface-emitting lasers (VCSELs) with emission wavelength within the second telecommunication window around 1.3 mm [1]. While very promising results already have been demonstrated for such VCSELs based on highly strained QWs with gain maximum just beyond 1.2 mm and negative gaincavity detuning to reach the 1.3 mm window [2,3], further extension of the QW wavelength can be expected to be beneficial in terms of flexibility in device design and optimized performance.…”

MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

“…Recently, highly strained InGaAs VCSELs with PL peak at 1.205 mm and laser emission wavelength around 1.26-1.27 mm have demonstrated very promising performance and continuous-wave (CW) operation up to 120 1C as well as 10 Gb/s operation [8]. Previously, the Sb surfactant-mediated growth had been investigated in group-IV Si/SiC superlattices, and for group III-V heterostructure materials.…”