High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

Adamiec, P.; Bonilla, Borja; Consoli, A.; Tijero, J. M. G.; Aguilera, Santiago; Esquivias, I.

doi:10.1364/ao.51.007160

Cited by 22 publications

(23 citation statements)

References 14 publications

(21 reference statements)

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“…The tilted and bended geometries were proposed in order to minimize undesired optical feedback from the amplifier section to the DFB oscillator. In fact, standard straight monolithically integrated MOPAs exhibit instabilities due to compound cavity effects arising from the residual reflectivity at the amplifier output facet [14,15]. The best experimental results in terms of output power and spectral quality were obtained for the bended geometry shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Random-modulation CW lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

Esquivias

Pérez-Serrano

Tijero

et al. 2017

International Conference on Space Optics — ICSO 2014

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Section: Resultsmentioning

confidence: 99%

Random-modulation CW lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

Esquivias

Pérez-Serrano

Tijero

et al. 2017

International Conference on Space Optics — ICSO 2014

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“…Using these commercial MOPA, Hansen and coworkers demonstrated the first all-semiconductor doppler anemometer for wind speed determination [17]. Our group at UPM also demonstrated the generation of 100 ps wide pulses with peak power up to 2.7 W at 1 GHz by gain-switching [39]. In addition, several investigations have helped to gain physical insight on the mode transitions and the complex dynamics previously observed.…”

Section: High Brightness Laser Diodesmentioning

confidence: 85%

“…However, all-semiconductor MOPAs based on tapered geometry emitting in the required wavelength were commercially available. Using these devices, the group demonstrated high-peak-power pulse generation by gain-switching [39] at 1.5 µm. However, a complex dynamic was observed even when the MOPA devices were driven at CW conditions.…”

Section: Objectives Of This Researchmentioning

confidence: 99%

“…The integrated configuration is formed by an index-guided single-frequency laser such as a DFB or a DBR laser together with a Semiconductor Optical Amplifier (SOA), which is typically a gain guided tapered section [39,69,70,[77][78][79]. For the case of the all-semiconductor hybrid configuration, the MO and PA sections are optimized separately and coupled through a system of lenses.…”

Section: High Brightness Laser Diodesmentioning

confidence: 99%

“…The generation of high power pulses under gain switching operation at 1550 nm was demonstrated by our group at UPM [39]. The device chosen for this purpose was the twosection QPC MOPA previously described in section 3.2.…”

Section: Introductionmentioning

confidence: 99%

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Emission characteristics of 1.5 um monolithically integrated master oscillator power amplifiers

Suárez¹,

Fernánda²

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The present work is a study of the emission characteristics of monolithic semiconductor Master Oscillator Power Amplifiers (MOPAs) relevant for their use in applications requiring simultaneously high brightness and high spectral purity semiconductor laser sources. Two types of laser devices with wavelengths ranging between 1540 nm and 1580 nm have been studied: Commercial two-section MOPAs and three-section MOPAs specially designed for their use as optical sources for Differential Absorption LIDAR. The spectral analysis of the behavior of the two-section MOPAs revealed the occurrence of undesired spectral instabilities in large ranges of driving conditions precluding their use in applications requiring stable and narrow linewidth emission. A detailed experimental analysis of the stable and unstable emission regimens has been complemented with a theoretical analysis using a Travelling Wave model. From both approaches the instabilities have been attributed to dynamic effects induced by the optical feed-back allowed by the unavoidable residual reflectivity of the front facet and mediated by self-and cross-heating effects. The three-section MOPAs have been demonstrated to be free of spectral instabilities in a large range of driving conditions. The operation of these devices under the modulation conditions required for the intended application has been demonstrated. Their emission characteristics under modulation have been analyzed paying special attention to the modulation induced spectral broadening. Evidence of a frequency modulation contribution to the broadening has been shown. The frequency modulation induced by the modulation amplitude has been attributed to the refractive index changes induced by the carrier density modulation, induced in turn by the modulating current.The work is structured in 6 chapters. In the introductory Chapter 1 the work is motivated and framed in the research line of the group. The potential of MOPAs for high brightness applications is illustrated in the case of three applications: free space optical communications, wind Lidar and Lidar for remote sensing of atmospheric gases. In Chapter 2 the main ingredients on laser diodes necessary for the proper understanding of the rest of the work are briefly summarized. The chapter includes a brief description of two concepts for increasing the brightness of semiconductor sources: tapered lasers and monolithically integrated MOPAs. A review of the state of the art in integrated semiconductor MOPAs is also included.The details of the two-section straight MOPAs and three-section bent MOPAs investigated in this work as well as a description of the experimental techniques used for their characterization are provided in Chapter 3. Specific relevance is given to the description of those set-ups and experimental techniques that were implemented or developed as a part of this work, such as the set-up for driving unmounted multi-section lasers and systematically recording the maps of the optical and Radio-Frequency (RF) spectra, the implementa...

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Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser

Adamiec,

Tijero,

Esquivias

et al. 2024

Physica Rapid Research Ltrs

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The relative intensity noise (RIN) in a two‐section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Herein, the dependence of the resonance frequency and the maximum RIN at the resonance frequency is studied as functions of the ridge waveguide (RW) and tapered section currents independently. The low frequency RIN is approximately −162 dB Hz−1, and the RIN peak at currents providing high output power is as low as −154 dB Hz−1. The observed nonlinearity of the squared resonance frequency with the RW section current is attributed to carrier saturation. The measured high values of the resonance frequency, exceeding 2.5 GHz for RW currents higher than 100 mA at a tapered current of 3 A, indicate gain lever enhancement.

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High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

Cited by 22 publications

References 14 publications

Random-modulation CW lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

Random-modulation CW lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

Emission characteristics of 1.5 um monolithically integrated master oscillator power amplifiers

Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser

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