High patterning photosensitivity by a novel fluorinated copolymer formulated resist

Guo, Yana; Li, Shenshen; Wang, Haihua; Chen, Yu; Chen, Huan; Wang, Dong; Wang, Qianqian; Kang, Wenbing

doi:10.1016/j.eurpolymj.2024.113009

European Polymer Journal

2024

DOI: 10.1016/j.eurpolymj.2024.113009

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High patterning photosensitivity by a novel fluorinated copolymer formulated resist

Yana Guo,

Shenshen Li,

Haihua Wang

et al.

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2024

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Cited by 2 publications

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Polymerizable Nonionic Perfluorinated Photoacid Generators for High‐Resolution Lithography

Liu,

Wang,

Wang

et al. 2024

Small Methods

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Advanced photoresists must satisfy stringent sensitivity requirements while maintaining the ability to print ever‐shrinking critical dimensions. However, the unavoidable acid diffusion associated with chemically amplified photoresists has led to a trade‐off between resolution, line‐edge roughness, and sensitivity, which presents a significant challenge for high‐resolution lithography. To address this issue, a novel class of alkene‐functionalized nonionic perfluorinated photoacid generators (PAGs) is developed. These fluorine‐rich compounds significantly enhance the photochemical reactivity due to the introduction of abundant F‐elements, thereby improving sensitivity. Upon irradiation by ultraviolet light or electrons, they generate long‐chain perfluorinated sulfonic acids with large sizes and minimal diffusion ranges, effectively suppressing acid diffusion. Furthermore, by employing these polymerizable PAG monomers, PAG‐bound polymers are synthesized that are likely to achieve higher resolution by minimizing acid diffusion. Lithography performance demonstrated patterning of sub‐45 nm lines at an electron beam dose of 29 µC cm−2. Overall, the developed perfluorinated PAGs and PAG‐bound polymer photoresists are promising candidates for achieving high‐sensitivity and high‐resolution nano‐patterning.

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Polymerizable Nonionic Perfluorinated Photoacid Generators for High‐Resolution Lithography

Liu,

Wang,

Wang

et al. 2024

Small Methods

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Influence of Chemical Structures on E-Beam Lithography Performance of Polysilsesquioxanes

Miao,

Zhang,

et al. 2024

ACS Appl. Mater. Interfaces

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Hydrogenated silsesquioxane (HSQ) is a key inorganic electron beam resist, celebrated for its sub-10 nm resolution and etching resistance, but it faces challenges with stability and sensitivity. Our innovative study has comprehensively assessed the lithographic performance of three functionalized polysilsesquioxane (PSQ) resist seriesolefins, halogenated alkanes, and alkanesunder electron beam lithography (EBL). We discovered that the addition of olefin groups, such as in the HMP-30 formulation with 30% propyl acrylate, remarkably increased the sensitivity to 0.6 μC/cm2. The inclusion of halogenated aromatic and hydrogen-substituted methyl groups further enhanced sensitivity and contrast, with HClBN-50 achieving a 22.9 nm resolution pattern. At the same time, the storage of PSQ resists was significantly improved compared to commercial HSQ with increasing alkane group content. Crucially, our research has unveiled the lithography reaction mechanism, highlighting how group encapsulation and steric hindrance influence PSQ performance. This insight is groundbreaking, offering a deeper understanding of the molecular structure-performance relationship and laying the groundwork for developing next-generation electron beam resists with superior sensitivity, resolution, and contrast for microelectronics manufacturing.

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High patterning photosensitivity by a novel fluorinated copolymer formulated resist

Cited by 2 publications

References 32 publications

Polymerizable Nonionic Perfluorinated Photoacid Generators for High‐Resolution Lithography

Polymerizable Nonionic Perfluorinated Photoacid Generators for High‐Resolution Lithography

Influence of Chemical Structures on E-Beam Lithography Performance of Polysilsesquioxanes

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