High-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 single crystals

Yamamoto, Kazuhisa; Kitanaka, Yuuki; Suzuki, Muneyasu; Miyayama, Masaru; Noguchi, Yuji; Moriyoshi, Chikako; Kuroiwa, Yoshihiro

doi:10.1063/1.2800822

Cited by 60 publications

(53 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…180° domains can be easily switched by E application compared with 90° domains and the volume of the backswitched 180° domains is small. 95) In contrast, 90° domains play a dominant role in the values of Pr and d33, as a result of the reorientation of 90° domain configurations in BNT-BT crystals (see Fig. 7).…”

Section: Reorientation Of Domain Structure Leading To Poor Propertiesmentioning

confidence: 99%

High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry

Noguchi

Tanabe

Suzuki

et al. 2008

J. Ceram. Soc. Japan

Self Cite

View full text Add to dashboard Cite

We present the O2-blowing method for the growth of high-quality single crystals of Bi-based perovskite ferroelectrics, in which O2 gas is directly introduced inside crucibles during crystal growth. The O2-blowing method is demonstrated to be effective for enhancing polarization and piezoelectric properties as well as reducing leakage current for (Bi,Na)TiO3-BaTiO3 crystals. The superior properties are suggested to originate from the reduced reorientation of non-180° domains. Ab initio calculations suggest that the interaction between spontaneous polarization and defect dipole composed of Bi vacancy and O vacancy is the origin of the reorientation of non-180° domains.

show abstract

Section: Reorientation Of Domain Structure Leading To Poor Propertiesmentioning

confidence: 99%

High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry

Noguchi

Tanabe

Suzuki

et al. 2008

J. Ceram. Soc. Japan

Self Cite

View full text Add to dashboard Cite

show abstract

“…8,9 Besides Bi 4 Ti 3 O 12 and its derivatives with three layers of TiO 6 octahedra, SrBi 2 Ta 2 O 9 is another kind of bismuth layer-structured ferroelectric material with m = 2 that shows excellent ferroelectric properties, which have been well studied. 8,10 In comparison to the volume of work that has been done on the above two systems with m = 2 and 3, there is still a great deal of work that should be done on those Aurivillius phase bismuth layerstructured ferroelectrics with m = 4. For example, although some ferroelectrics in this family of materials, such as ABi 4 Ti 4 O 15 ͑A = Ca, Ba, Sr, and Pb͒, have been studied in the form of thin films, bulk ceramics, and single crystals, one of its derivatives, M 0.5 Bi 4.5 Ti 4 O 15 ͑M = Na and K͒ has only been studied in ceramic and single crystal forms.…”

Section: Introductionmentioning

confidence: 99%

Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure

Cheng

Wang

Zhao

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

A ferroelectric thin film of Aurivillius phase K 0.5 Bi 4.5 Ti 4 O 15 (KBT) with a complex bismuth layer-structure was fabricated using the pulsed laser deposition method. The thin film grown on Pt/Ti/SiO 2 / Si substrate shows a strong c-axis orientation, as revealed by x-ray diffraction results, and platelike growth of grains. A Pt/ KBT/Pt capacitor shows a maximum polarization of about 20 µC/cm 2 . In addition, the capacitor also shows good fatigue resistance, with a decrease of 14.5% in the remanent polarization after 10 7 switching cycles. This Aurivillius phase with four layers of TiO 6 octahedra in its unit cell has a band gap of 3.6 eV, which is greater than that of Bi 4 Ti 3 O 12 . KeywordsLead, free, potassium, bismuth, titanate, thin, film, complex, Aurivillius, layer, structure Disciplines Engineering | Physical Sciences and Mathematics Publication DetailsCheng, Z, Wang, P, Zhao, H, & Kimura, H (2010), Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure, Journal of Applied Physics, 107 (8) A ferroelectric thin film of Aurivillius phase K 0.5 Bi 4.5 Ti 4 O 15 ͑KBT͒ with a complex bismuth layer-structure was fabricated using the pulsed laser deposition method. The thin film grown on Pt/ Ti/ SiO 2 / Si substrate shows a strong c-axis orientation, as revealed by x-ray diffraction results, and platelike growth of grains. A Pt/KBT/Pt capacitor shows a maximum polarization of about 20 C / cm 2 . In addition, the capacitor also shows good fatigue resistance, with a decrease of 14.5% in the remanent polarization after 10 7 switching cycles. This Aurivillius phase with four layers of TiO 6 octahedra in its unit cell has a band gap of 3.6 eV, which is greater than that of Bi 4 Ti 3 O 12 .

show abstract

“…As mentioned before, the piezoelectric response and polarization are not a strong function of temperature at the temperatures well below Curie temperature. Previous paper reported that the created oxygen vacancy defect dipoles could pin the domain walls, 9) so that this result might be caused by the volatilization of Bi 2 O 3 during the calcination or the sintering. However, in this study, it was unclear that oxygen vacancy was originated from the volatilization of Bi 2 O 3 or valence changing of iron during the sintering.…”

Section: Resultsmentioning

confidence: 99%

Chemical composition dependence of ferroelectric properties for BaTiO3–Bi(Mg1/2Ti1/2)O3–BiFeO3 lead-free piezoelectric ceramics

Mitsui

Fujii

Nakashima

et al. 2013

J. Ceram. Soc. Japan

Self Cite

View full text Add to dashboard Cite

[(1 ¹ x ¹ y)BT-xBMT-yBF] ceramics were prepared by a conventional solidstate synthesis, and their crystal structure and piezoelectric properties were investigated in details. Synchrotron X-ray diffraction (XRD) pattern revealed that a single perovskite phase was obtained for samples at x = 0.0500.150, y = 0.4650.735. Splitting of the (111) peak was observed when (x, y) = (0.050, 0.685) and (0.050, 0.735) indicating that crystal structure of samples changed from pseudocubic to rhombohedral phase with increasing BF content. As the BF content increased, the Curie temperature increased. The highest apparent piezoelectric constant d 33 * values estimated from strain (S) over the applied electric-field (E) value (d 33 * = S/E) was observed at 300 pm/V for the 0.325BT-0.100BMT-0.575BF ceramics at 25°C and 1 Hz.

show abstract

High-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 single crystals

Cited by 60 publications

References 22 publications

High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry

High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry

Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure

Chemical composition dependence of ferroelectric properties for BaTiO<sub>3</sub>–Bi(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>–BiFeO<sub>3</sub> lead-free piezoelectric ceramics

Contact Info

Product

Resources

About