Vertically aligned nanocomposite (VAN) films, comprising nanopillars
of one phase embedded in a matrix of another, have shown great promise
for a range of applications due to their high interfacial areas oriented
perpendicular to the substrate. In particular, oxide VANs show enhanced
oxide-ion conductivity in directions that are orthogonal to those
found in more conventional thin-film heterostructures; however, the
structure of the interfaces and its influence on conductivity remain
unclear. In this work,
17
O NMR spectroscopy is used to
study CeO
2
–SrTiO
3
VAN thin films: selective
isotopic enrichment is combined with a lift-off technique to remove
the substrate, facilitating detection of the
17
O NMR signal
from single atomic layer interfaces. By performing the isotopic enrichment
at variable temperatures, the superior oxide-ion conductivity of the
VAN films compared to the bulk materials is shown to arise from enhanced
oxygen mobility at this interface; oxygen motion at the interface
is further identified from
17
O relaxometry experiments.
The structure of this interface is solved by calculating the NMR parameters
using density functional theory combined with random structure searching,
allowing the chemistry underpinning the enhanced oxide-ion transport
to be proposed. Finally, a comparison is made with 1% Gd-doped CeO
2
–SrTiO
3
VAN films, for which greater NMR
signal can be obtained due to paramagnetic relaxation enhancement,
while the relative oxide-ion conductivities of the phases remain similar.
These results highlight the information that can be obtained on interfacial
structure and dynamics with solid-state NMR spectroscopy, in this
and other nanostructured systems, our methodology being generally
applicable to overcome sensitivity limitations in thin-film studies.