High-output-power and high-temperature operation of blue GaN-based vertical-cavity surface-emitting laser

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Kenji; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

doi:10.7567/apex.11.112101

Cited by 61 publications

(53 citation statements)

References 24 publications

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“…EPFL obtained DBRs whose reflectivity exceeded 99% at λ ¼ 340 nm with as few as 35 pairs, [35] and a reflectivity of 99.6% at λ ¼ 424 with 42 pairs. [36] Meijo University and Nagoya University [37] have also demonstrated blue VCSELs with a record high optical output power of 15.7 mW at 20 C and 2.7 mW at 110 C. [38] Using these mirrors, EPFL obtained an electrically pumped VCSEL operating at RT in pulsed mode, [39] whereas Nagoya University and Meijo University obtained a VCSEL which lased at RT under CW operation. [40] However, the growth of high-quality AlInN layers is challenging due to the different optimum growth temperatures of InN and AlN, and the compositional inhomogeneity in AlInN alloys which results from the large disparity in the covalent bond lengths between the two binary compounds.…”

Section: Review Of State-of-the-art Iii-n Vcselsmentioning

confidence: 99%

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Mehta

Yoder

2020

Physica Status Solidi (a)

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The objective of this article is to demonstrate a general approach to the problem of designing a novel laser diode. This involves first understanding prior work in this and related fields (literature survey), and then acquiring a thorough understanding of the relevant physics. This in turn enables the development and/or selection of appropriate models and tools for that problem followed by partitioning the problem into smaller solvable chunks. This involves identifying the key contributing factors affecting poor laser performance (sources of optical loss, poor injection efficiency, high thermal resistance, etc.), quantifying and ranking their relative importance, and finally finding solutions to these problems. The final step involves putting all these pieces back together to arrive at the final laser design. This step is challenging due to the strong coupling between electrical, optical, and thermal physics in a laser diode. Any design changes must be considered through all three lenses. Herein, this approach to laser design will be demonstrated in the context of a novel III–N‐based ultraviolet vertical‐cavity surface‐emitting laser diode (UV‐VCSEL).

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Section: Review Of State-of-the-art Iii-n Vcselsmentioning

confidence: 99%

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Mehta

Yoder

2020

Physica Status Solidi (a)

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“…Plots reprinted with permission. 64 Overlaid are the thermal resistance of reported CW-RT VCSEL by NCTU [88], Meijo-Stanley [71], and UCSB [89]. 115 xviii Tables Table 1.1 List of some dielectric materials used in DBRs [106].…”

Section: List Of Figuresmentioning

confidence: 99%

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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I am grateful to many people for making this work possible. First and foremost, I would like to thank my advisor Prof. Daniel Feezell for his dedicated guidance and support. Early on in my degree, I remember him mentioning that VCSEL projects are always of high risk and high reward. For the longest time, I doubted myself on whether I would be able to fulfill all the project requirements. But, Prof. Feezell believed in my ability and urged me to push forward which ultimately lead to groundbreaking results from my VCSEL project. Not only did I learn a ton from his vast knowledge on IIInitride materials and devices, his constructive criticisms greatly improved the quality of my work and allowed me to grow as a researcher. Next, I am thankful to my committee members and collaborators, Prof. Ganesh Balakrishnan, Prof. Sang Han, and Dr. Ting Luk for their time and suggestions. Their valuable insight on optical, electrical, and mechanical properties of semiconductors helped me tremendously in understanding the material characteristics and device performance of my VCSELs. I cannot express the immense gratitude I feel for my fellow group members, both past and present. All of whom have helped me towards the completion of my PhD in some way or another. Many thanks to Ashwin, Morteza, Mohsen, and Mike for introducing me to MOCVD and for taking care of my growths when I was busy doing something else. Discussions regarding fabrication with Andrew, Mahmoud, Rhett, Kenny, Farnood, and Abdel have always helped me in developing processes very v quickly and reliably. I am also grateful to Serdal, Arman, and Isaac for assisting me in various material and device related characterizations. Many of the accomplishments mentioned in this thesis could not have been possible without the support of the technical and/or administrative staff. As such, I am forever indebted to the ECE, CHTM, and CINT staff members for putting up with my numerous requests and questions throughout the years. Beyond the appreciation of the technical side of things, I would like to thank all my friends from back home and the ones I made during the course of my study. They were always there to lend a helping hand or to simply distract me from work whenever graduate student life became too overwhelming. Furthermore, I must also acknowledge the Bangladeshi community here at UNM for making Albuquerque feel like home, even though my real home is halfway around the world. Looking back, I will forever cherish these memories. Last, but certainly not least, I would like to thank my parents, my older sister, and my younger brother. I would not be where I am at today without their unconditional love and encouragement. They have sacrificed a lot so that I can pursue a career of my choice, even if it meant me being away from home for an extended period time. I only hope that the work I performed in this thesis is substantial enough to repay them and make them proud. vi

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“…However, unlike conventional VCSEL based on distributed Bragg reflectors (DBRs) based on lattice matching material system, such as GaAs/AlGaAs, GaN based VCSEL suffers from the large lattice-mismatch AlGaN/GaN DBRs, leading to cracking of material structure after growth. Until very recently, the output power of the violet-blue VCSEL increased from μW to above 10 mW [65]. Therefore, significant efforts are required to develop high power, high speed GaN-based VCSELs.…”

Section: Gan Based Eeld Sld and Vcselmentioning

confidence: 99%

Laser-based visible light communications and underwater wireless optical communications: a device perspective

Shen

Alkhazragi

Sun

et al. 2019

Novel in-Plane Semiconductor Lasers XVIII

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High-speed visible light communications (VLC) has been identified at an essential part of communication technology for 5G network. VLC offers the unique advantages of unregulated and secure channels, free of EM interference. Compared with the LED-based VLC transmitter, laser-based photonic systems are promising for compact, droop-free, and high-speed white lighting and VLC applications, ideal for ultra-fast 5G network and beyond. Besides the potential for achieving high data rate free-space communication links, i.e. the Li-Fi network, laser-based VLC technology can also enable underwater wireless optical communications (UWOC) for many important applications. In this paper, the recent research progress and highlights in the fields of laser-based VLC and UWOC have been reviewed with a focused discussion on the performance of various light sources, including the modulation characteristics of GaNbased edge emitting laser diodes (EELDs), superluminescent diodes (SLDs) and vertical-cavity surface-emitting lasers (VCSELs). Apart from the utilization of discrete components for building transceiver in VLC systems, the development of III-nitride laser-based photonic integration has been featured. Such on-chip integration offers many advantages, including having a small-footprint, high-speed, and low power consumption. Finally, we discuss the considerations of wavelength selection for various VLC and UWOC applications. Comparison of infrared (IR) and visible lasers for channels with high turbulence and the study of ultraviolet (UV) and visible lasers for non-line-of-sight (NLOS) communications are presented.

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High-output-power and high-temperature operation of blue GaN-based vertical-cavity surface-emitting laser

Cited by 61 publications

References 24 publications

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Laser-based visible light communications and underwater wireless optical communications: a device perspective

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