High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

Abstract

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial 0.1-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of 2.5 mm × 1.2 mm. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

Ka‐band VCO with parasitic capacitance cancelling technique

“…Therefore, frequency multiplication techniques are widely used to increase the f osc [2]. Push–push topology provides frequency doubling without an external multiplier circuit and can be easy to implement in a cross‐coupled VCO.…”