High-order-harmonic generation of a doped semiconductor

Huang, Tengfei; Zhu, Xinxin; Li, Liang; Liu, Xi; Lan, Pengfei; Lu, Peixiang

doi:10.1103/physreva.96.043425

Cited by 66 publications

(51 citation statements)

References 44 publications

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“…Compared with the undoped system, the acceptor-and donor-type doping results in a shallower and deeper effective potential around the impurity ion, respectively. Unlike the single-active-electron approach using a parametrized potential [37], the effective potential in the DFT description is self-consistently found in a many-electron model. With the static KS potential at hand, one can find the occupied and unoccupied orbitals by diagonalization, together with their corresponding energies.…”

Section: A Doping Effects In the Dft Descriptionmentioning

confidence: 99%

“…A recent experiment has demonstrated enhanced HHG emission in tailored semiconductors [34]. Theoretical studies have proposed possibilities to enhance HHG in solids by quantum confinement [35], inhomogeneous fields [36], or substitutional doping [37]. Indeed, impurities typically influence the physical properties of a solid, allowing one to control processes in the target material for various applications (see, e.g., the recent works [38,39]).…”

Section: Introductionmentioning

confidence: 99%

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Enhanced high-order harmonic generation in donor-doped band-gap materials

Hansen

Madsen

2019

Phys. Rev. A

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We find that a donor-doped band-gap material can enhance the overall high-order harmonic generation (HHG) efficiency by several orders of magnitude, compared with undoped and acceptordoped materials. This significant enhancement, predicted by time-dependent density functional theory simulations, originates from the highest occupied impurity state which has an isolated energy located within the band gap. The impurity-state HHG is rationalized by a three-step model, taking into account that the impurity-state electron tunnels into the conduction band and then moves according to its band structure until recombination. In addition to the improvement of the HHG efficiency, the donor-type doping results in a harmonic cutoff different from that in the undoped and acceptor-doped cases, explained by semiclassical analysis for the impurity-state HHG.

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Section: A Doping Effects In the Dft Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced high-order harmonic generation in donor-doped band-gap materials

Hansen

Madsen

2019

Phys. Rev. A

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“…We found that the spatial width of the electron and hole wave packets can be almost one order of magnitude larger than the lattice constant, allowing for the imperfect recollisions. This suggests that the harmonic emission can probe the degree of spatial homogeneity of the periodic structure [25,39,[53][54][55] as well as the temporal dephasing introduced by e.g. electron correlation.…”

mentioning

confidence: 99%

Imperfect Recollisions in High-Harmonic Generation in Solids

Yue

Gaarde

2020

Phys. Rev. Lett.

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We theoretically investigate high-harmonic generation in hexagonal boron nitride with linearly polarized laser pulses. We show that imperfect recollisions between electron-hole pairs in the crystal give rise to an electron-hole-pair polarization energy that leads to a double-peak structure in the subcycle emission profiles. An extended recollision model (ERM) is developed that allows for such imperfect recollisions, as well as effects related to Berry connections, Berry curvatures, and transition-dipole phases. The ERM illuminates the distinct spectrotemporal characteristics of harmonics emitted parallel and perpendicularly to the laser polarization direction. Imperfect recollisions are a general phenomenon and a manifestation of the spatially delocalized nature of the real-space wave packet, they arise naturally in systems with large Berry curvatures, or in any system driven by elliptically polarized light.

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“…Our analysis further deepens the links between strong field physics in the gas and condensed matter phases. Recently, HHG from impurities in solids has been demonstrated [27,28]. We develop quantum equations of motion and a three step model for this process.…”

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confidence: 99%

High harmonic generation tomography of impurities in solids: Conceptual analysis

et al. 2018

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A three step model for high harmonic generation from impurities in solids is developed. The process is found to be similar to high harmonic generation in atomic and molecular gases with the main difference coming from the non-parabolic nature of the bands. This opens a new avenue for strong field atomic and molecular physics in the condensed matter phase. As a first application, our conceptual study demonstrates the feasibility of tomographic measurement of impurity orbitals.

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High-order-harmonic generation of a doped semiconductor

Cited by 66 publications

References 44 publications

Enhanced high-order harmonic generation in donor-doped band-gap materials

Enhanced high-order harmonic generation in donor-doped band-gap materials

Imperfect Recollisions in High-Harmonic Generation in Solids

High harmonic generation tomography of impurities in solids: Conceptual analysis

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