High optoelectronic performance of a local-back-gate ReS₂/ReSe₂ heterojunction phototransistor with hafnium oxide dielectric

Abstract

A high optoelectronic performance ReS2/ReSe2 van der Waals (vdW) heterojunction phototransistor utilizing thin hafnium oxide (HfO2) as a local-back-gate dielectric layer was preparation and explored. The heterojunction-based phototransistor exhibits a...

Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

“…Then, responsivity as a figure of merit to evaluate the performance of the photodetector is determined by R = | I ph – I d |/( P in × S ), where I ph , I d , P in , and S represent photocurrent, dark current, light intensity, and active device area, respectively. The deduced responsivities versus light power under V ds = 3 V are displayed in the inset images in Figure , demonstrating an obvious decay tendency with the light intensity increasing, consistent with most reported photoconductive-dominated photodetectors. ,, Additionally, the obtained maximum responsivities at 350, 638, and 980 nm reache to as high as 126.56, 16.24, and 0.66 A/W, respectively, superior to previously reported devices (Table ), which is primarily ascribed to the high absorption and quality of the heterostructure.…”

“…Apparently, the currents of the vdWs heterostructure at ±1 V are about 1.7 × 10 −8 and −6.10 × 10 −11 A, respectively, which exhibits a notable rectifying behavior with a forward/reverse current ratio as high as ∼280, implying the potential of this device in low-power and ultrasensitive applications, while almost linear I−V characteristics are observed for both ReS 2 and ReSe 2 devices, indicating this diode behavior originates from the heterojunction region 2, demonstrating an obvious decay tendency with the light intensity increasing, consistent with most reported photoconductive-dominated photodetectors. 25,30,31 Additionally, the obtained maximum responsivities at 350, 638, and 980 nm reache to as high as 126.56, 16.24, and 0.66 A/W, respectively, superior to previously reported devices (Table 1), which is primarily ascribed to the high absorption and quality of the heterostructure.…”

“…The optoelectronic response of p-n ReSe 2 /MoS 2 diodes at 633 nm light reaches to as high as 6.75 A/W . Besides those, the optoelectronic performance of ReS 2 /ReSe 2 heterostructures is also investigated with an efficiency of ∼0.5% and a high on/off current ratio of over 10 6 . , Nonetheless, there is an urgent need for the extensive exploration on the properties of the ReS 2 /ReSe 2 heterostructures, such as the detection performance at near-infrared (NIR) spectrum as well as response speed. In addition, linear-polarity characteristics have not been investigated.…”

A compound Kinoform/Fresnel zone plate lens with 15 nm resolution and high efficiency in soft x-ray

“…In step 2, a 15 nm thick HfO 2 was coated on the surfaces of the HSQ-Kinoform zones by atomic layer deposition [29,30]. By this way, a HfO 2 -based binary zone plate with the outermost zone-width of 15 nm is formed in region-III, as presented in figure 3(e) for the top view as well as in figure 3(f) for the tilted view of 45°.…”

A dielectric Kinoform zone plate with 15 nm resolution and high efficiency for soft X-ray optics

“…Finally, the whole sample was coated with a 15 nm thick HfO2 by atomic layer deposition. Further ALD details can be found in the references 24,25 . b shows the overviews of HfO2-DKZP lens with the diameter of 100 μm, dr=60 nm, h=350 nm and its effective outmost zone width of 15 nm.…”