High optical power electroabsorption waveguide modulator

Johansson, Leif; Akulova, Y.A.; Fish, G.A.; Coldren, L.A.

doi:10.1049/el:20030264

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…DQW EAMs show no deviation in bandwidth with up to 17 mA of photocurrent. Alternatively, similar FK-EAMs have been shown to be compatible with large optical power levels in [5].…”

Section: Dqw Tunable Transmittermentioning

confidence: 99%

A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs

Sysak

Raring

Barton

et al. 2006

IEEE Photon. Technol. Lett.

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Abstract-A monolithic integration platform is demonstrated for high functionality photonic circuits that include quantum-well electroabsorption modulators, semiconductor optical amplifiers, and widely tunable lasers. The platform is based on the selective removal of a set of active quantum wells located above an optical waveguide layer. The waveguide layer contains a second set of quantum wells to be used in modulator regions. Fabrication requires only a single blanket InP regrowth.Index Terms-Electroabsorption modulators (EAMs), monolithic integration, quantum confined stark effect (QCSE), sampled grating distributed Bragg reflector (SGDBR) laser, semiconductor lasers, semiconductor optical amplifier (SOA).

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“…DQW EAMs show no deviation in bandwidth with up to 17 mA of photocurrent. Alternatively, similar FK-EAMs have been shown to be compatible with large optical power levels in [5].…”

Section: Dqw Tunable Transmittermentioning

confidence: 99%

A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs

Sysak

Raring

Barton

et al. 2006

IEEE Photon. Technol. Lett.

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“…In the receiver section a broad-band high-saturation power [7] 200-m-long FK PIN photodiode has been integrated with a 300-m-long SOA preamplifier similar to that described in [4]. The amplifier provides between 4 and 5 dB of gain and shows 1 dB of gain compression at 10.4-mW input fiber power with 100-mA bias.…”

Section: Optical Receivermentioning

confidence: 99%

Single-Chip Wavelength Conversion Using a Photocurrent-Driven EAM Integrated With a Widely Tunable Sampled-Grating DBR Laser

Sysak

Barton

Johansson

et al. 2004

IEEE Photon. Technol. Lett.

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Abstract-Tunable photocurrent-driven wavelength converters using widely tunable sampled grating distributed Bragg reflector lasers, electroabsorption modulators, semiconductor optical amplifiers, and an optically preamplified receiver have been fabricated and tested. Dynamic wavelength conversion has been achieved over 40 nm with optical bandwidths up to 10 GHz.Index Terms-Electroabsorption modulators (EAMs), offset quantum well, sampled grating distributed Bragg reflector (SGDBR) laser, semiconductor lasers, semiconductor optical amplifier (SOA)-PIN receiver, semiconductor optical amplifiers (SOAs), wavelength converters (WCs).

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