High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

“…1-5 Among them, AlGaN/GaN photodetector has superiority over others in the development of highspeed optoelectronic integrated circuit because it can be easily integrated with matured AlGaN/GaN high electron mobility transistor ͑HEMT͒ devices in one epitaxial step. 6,7 Although several research groups [8][9][10] have contributed to the development of AlGaN/GaN photoconductive detector based on HEMT gate structure, this detector has very limited application due to its large dark current, poor UV/visible ratio and slow response time.…”

Gallium nitride based optoelectronic devices on silicon-on-insulator substrates

“…An extremely high PD responsiveness at an incident light wavelength of 240 nm of 5.2×109 A/W was reported for an UV MSM PDs based on a 2DEG AlGaN/GaN heterostructure on sapphire[88]. Since this is the first time data from a 6 inch Si-based substrate technology is being reported,the results obtained in this thesis are quite comparable to data from such nitride layers on sapphire substrates.…”

“…As a result of this vertical electric field, photogenerated electrons will be compelled to move towards the Al x Ga 1-x N/GaN interface while photogenerated holes will be repelled towards the substrate, which reduces the probability of recombination of the photogenerated carriers leading to an improved detector responsivity [87][88]. It was reported that when ohmic contacts are used as electrodes, dark current was high as a result of the polarization fields due to the high density of 2DEG at the interface [89].…”

Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

“…The diode structures include metal-semiconductormetal (MSM) diode [10], PN junction diode [11], and PIN junction diode [12]. Furthermore, various AlGaN/GaN high electron mobility transistor (HEMT) or PD structures [9], [13], [14] were also studied to provide UV detection with high photocurrent gain. This work investigates, for the first time, UV detection based on a gated In 0.17 Al 0.83 N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET).…”