High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, D.; Pérez, Ana Fernández; Puzyrev, Yevgeniy; Liu, Yaohua; Velthuis, S. G. E. te; Freeland, J. W.; Shafer, Padraic; Zhu, Chenhui; Varela, M.; León, Carlos; Sefrioui, Z.; Santamarı́a, J.; Pantelides, Sokrates T.

doi:10.1002/admi.201600086

Cited by 5 publications

(2 citation statements)

References 48 publications

(95 reference statements)

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“…spin-lattice coupling | interfaces | magnetic/electric | structural transition | ultrathin films I nterface physics has emerged as one of the most popular methods to discover unique phenomena caused by broken symmetry (1)(2)(3)(4)(5)(6). In transition metal oxide (TMO) interfaces, the different electronic, magnetic, lattice, and orbital properties of two adjoined materials lead to fascinating properties that are often radically different from those of the two component bulk materials (7)(8)(9)(10).…”

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confidence: 99%

Interface-induced multiferroism by design in complex oxide superlattices

Guo

Wang

Dong

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La 2/3 Sr 1/3 MnO 3 (LSMO)/ BaTiO 3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin-lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin-lattice coupling.spin-lattice coupling | interfaces | magnetic/electric | structural transition | ultrathin films I nterface physics has emerged as one of the most popular methods to discover unique phenomena caused by broken symmetry (1-6). In transition metal oxide (TMO) interfaces, the different electronic, magnetic, lattice, and orbital properties of two adjoined materials lead to fascinating properties that are often radically different from those of the two component bulk materials (7-10). It would seem that we are on the verge of being able to design (11) or engineer (12) the properties of interfaces.Although the behavior of individual interfaces has been widely investigated, how two or more interfaces behave within superlattices (SLs) remains an interesting and open topic (13,14). As shown in Fig. 1A, when two interfaces are geometrically close enough, they can drastically alter the properties of the material in between because of proximity effects. Unlike layered compounds, such as Fe-based superconductors and cuprates, which have pronounced 2D properties, most perovskites with the chemical formula ABO 3 exhibit drastic decreases in their functionalities under reduced dimensionality (i.e., ultrathin materials). This property has hindered the exploration and development of active low-dimensional materials (15, 16). Therefore, exploring ultrathin materials confined by two interfaces is a rational approach to see whether interfacial effects can be exploited to achieve desired functionalities.In this work, we present an example of using the structural phase change induced by two adjacent interfaces as a route to design ultrathin TMOs. We choose two materials with distinct properties: BaTiO 3 (BTO), which in its bulk form, is polar ferroelectric, and La 2/3 Sr 1/3 MnO 3 (LSMO), which in its bulk form, is nonpolar/tilt ferromagnetic....

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confidence: 99%

Interface-induced multiferroism by design in complex oxide superlattices

Guo

Wang

Dong

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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“…Interestingly, Shen et al very recently proposed a possible magneto-structural mechanism for the switching of dead layers-in that case resulting in a suppression of spin-polarized transport in half-metallic LCMO. 23 In their recent work, Norpoth et al 24 provided evidence that in the case of Pr 0.7 Ca 0.3 MnO 3 resistive switching processes can actually involve a combination of structural transitions and oxygen vacancy migration. In our case, the results indicate the structural/electronic transition of LSMO dead layers to act as the fundamental switching step.…”

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Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers

et al. 2019

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Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic circuits. Here we report on a structurally driven switching mechanism involving the so-called "dead" layers of perovskite manganite surfaces. Forming a tunnel barrier whose thickness can be changed in monolayer steps by electrical fields, the switching effect exhibits well-defined and robust resistive states.

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Memristive devices from ZnO nanowire bundles and meshes

Puzyrev

Shen

Zhang

et al. 2017

Applied Physics Letters

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We report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.

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High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Cited by 5 publications

References 48 publications

Interface-induced multiferroism by design in complex oxide superlattices

Interface-induced multiferroism by design in complex oxide superlattices

Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers

Memristive devices from ZnO nanowire bundles and meshes

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