High-NA EUV Lithography exposure tool: program progress and mask impact (Conference Presentation)

Schoot, Jan van; Setten, Eelco van; Troost, Kars; Lok, Sjoerd; Stoeldraijer, Judon; Peeters, Rudy; Benschop, Jos; Zimmermann, J.; Graeupner, Paul; Kuerz, Peter; Kaiser, Winfried

doi:10.1117/12.2538325

Cited by 3 publications

(1 citation statement)

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“…It should be noted that in the near future both the imaging as well as the pattern shift aspects of any chosen BB design will become more critical for the half-field stitching that might be needed for the upcoming anamorphic high-NA EUV platform. 22…”

Section: Black Border Considerationmentioning

confidence: 99%

High-power EUV lithography: spectral purity and imaging performance

Kerkhof

Liu

Meeuwissen

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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With the introduction of the NXE:3400B scanner, ASML has brought extreme ultraviolet lithography (EUV) to high-volume manufacturing (HVM). The high-EUV power of >200 W being realized with this system satisfies the throughput requirements of HVM, but also requires reconsideration of the imaging aspects of spectral purity, both from the details of the EUV emission spectrum and from the deep-ultraviolet (DUV) emission. We present simulation and experimental results for the spectral purity of high-power EUV systems and the imaging impact of this, both for the case of with and without a pellicle. Also, possible controls for spectral purity will be discussed, and an innovative method will be described to measure imaging impact of varying conversion efficiency (CE) and DUV. It will be shown that CE optimization toward higher source power leads to reduction in relative DUV content, and the small deltas in EUV source spectrum for higher power do not influence imaging. It will also be shown that resulting variations in DUV do not affect imaging performance significantly, provided that a suitable reticle black border is used. In summary, spectral purity performance is found to enable current and upcoming nodes of EUV lithography and to not be a bottleneck for further increasing power of EUV systems to well above 250 W.

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Section: Black Border Considerationmentioning

confidence: 99%

High-power EUV lithography: spectral purity and imaging performance

Kerkhof

Liu

Meeuwissen

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2021

Handbook of Laser Micro- And Nano-Engineering

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Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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Semiconductor lithography currently provides a resolution close to 10 nm, with the aim of producing extremely fine patterning. Over the last decade, lithography techniques have progressed from ArF immersion to multiple patterning to extreme ultraviolet lithography (EUVL) operating at a wavelength of 13.5 nm. During this period, the first-generation lithography devices were immersion systems and achieved 40 nm resolution through a 1.35 numerical aperture (NA) projection lens in conjunction with an ArF laser (operating at 193 nm) and water immersion. To make full use of the capability of the projection lens, A. Suzuki (*) Head quarter, AS Lithography Consulting

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High-NA EUV Lithography exposure tool: program progress and mask impact (Conference Presentation)

Cited by 3 publications

References 0 publications

High-power EUV lithography: spectral purity and imaging performance

High-power EUV lithography: spectral purity and imaging performance

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

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