High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Ebata, K.; Tomai, Shigekazu; Tsuruma, Yuki; Iitsuka, Takashi; Matsuzaki, Shigeo; Yano, Koki

doi:10.1143/apex.5.011102

Cited by 87 publications

(62 citation statements)

References 16 publications

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“…4,5 LG Display has released a 55-in. In viewpoints of oxide active channels, the methodologies to enhance the l FE can be roughly classified as follows: (1) modification of the composition of IGZO in terms of its atomic ratio has produced large values of l FE , ranging from 24.2 to 46 cm 2 V À1 s À1 ; [7][8][9] (2) new compositions, such as Zn-In-Sn-O, [10][11][12] Al-Sn-Zn-In-O, 13 and In-Ga-O, 14,15 have been reported to show l FE values of 51.7, 31.9, and 43 cm 2 V À1 s À1 , respectively; and (3) double-stacked active layers composed of high-and low-density carrier layers were also proposed as a promising approach. 6 During the initial stage of development, the l FE of the oxide TFT, which is approximately 10 cm 2 V À1 s À1 for IGZO TFTs, was considered sufficient for state-of-the-art ultra-definition (UD) TV panels and higher-resolution mobile displays.…”

Section: Introductionmentioning

confidence: 99%

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

Park

Ryu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The optimization of the passivation process for oxide thin film transistors with high carrier mobility was investigated. Hydrogen incorporation into oxide channels during the deposition of SiNx could degrade device stability and uniformity, especially for high-mobility devices. A novel double-layered passivation film structure composed of Al2O3/SiNx was proposed, in which thin and dense Al2O3 film prepared by atomic layer deposition was introduced underneath the SiNx layer. In-Ga-Zn-O TFT passivated with the proposed double-layered films showed no significant negative shift in turn-on voltage, even after passivation. The field-effect mobility and subthreshold swing were typically measured as 27.7 cm2 V−1 s−1 and 0.11 V/dec, respectively. Hydrogen doping was effectively protected by the introduction of Al2O3 as thin as 15 nm.

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Section: Introductionmentioning

confidence: 99%

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

Park

Ryu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Thus, choosing a dopant with an appropriate bond-dissociation energy is important when fabricating stable metal-oxide TFTs for flat-panel displays. 3,4 In-Sn-O (ITO), 5,6 In-Zn-O (IZO), 7,8 In-W-O, 9 In-Ga-Zn-O (IGZO), 10,11 and Ta-In-Zn-O 12 have been widely studied for thin-film transistor (TFT) applications because they exhibit high electron mobility owing to their edge-sharing polyhedral structure. 13,14 In particular, TFTs based on amorphous IGZO have far better electrical properties than conventional amorphous Si TFTs; this difference has contributed to the development of nextgeneration high-definition display panels based on liquid crystals and organic light-emitting diodes (OLEDs).…”

mentioning

confidence: 99%

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Aikawa¹,

Nabatame²,

Tsukagoshi³

2013

Applied Physics Letters

119

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Amorphous metal oxide thin-film transistors (TFT) are fabricated using InO x -based semiconductors doped with TiO 2 , WO 3 or SiO 2 . Although density of dopant is low in the film, change in the electrical properties showed strong dependence on the dopant species. We found that the dependence could be reasonably explained by the bond-dissociation energy. By incorporating the dopant with higher bond-dissociation energy, the film becomes less sensitive to oxygen partial pressure used during sputtering deposition and remains electrically stable to thermal annealing treatment. The concept of bond-dissociation energy can contribute to the realization of more stable metal oxide TFTs for flat panel displays.

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“…For example, for large AMOLED TVs, the mobility requirement is generally predicted to be over 30 cm 2 /V · s (depending on display resolution and pixel-circuit designs) because OLED pixels need high current in order to emit light through current injection. Many researchers have reported various oxide semiconductor materials and structures that can achieve high-mobility TFTs [37,[151][152][153]. Interestingly, as we learn about the electronic nature of oxide semiconductors, we note that the mobility values are controllable in the range of 1-30 cm 2 /V · s, as long as device-instability is not a concern [152,153].…”

Section: Demand For Higher Mobilitymentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Cited by 87 publications

References 16 publications

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Overview of electroceramic materials for oxide semiconductor thin film transistors

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