High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Sharma, Yogesh; Ahyi, A. C.; Isaacs-Smith, T.; Modic, Aaron; Park, M.; Xu, Yi; Garfunkel, Eric; Dhar, Sarit; Feldman, L. C.; Williams, John R.

doi:10.1109/led.2012.2232900

Cited by 74 publications

(46 citation statements)

References 12 publications

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“…Note that the field-effect mobility used in this letter is different from the electron drift mobility in an inversion layer because the number of mobile electrons in the inversion layer is reduced by electron trapping [18] and the definition of µ FE itself is different from the drift mobility. The µ FE peak value was 102 cm 2 /Vs, which is higher than the values of 4H-SiC MOSFETs fabricated by nitridation (e.g., 20-50 cm 2 /Vs) [5], [6] and comparable to those of 4H-SiC MOSFETs fabricated by P diffusion (e.g., 70-90 cm 2 /Vs) [9], [11]. The obtained channel mobility is lower than for the MOSFETs on a (1120) face (e.g., >120 cm 2 /Vs) [12].…”

Section: Resultsmentioning

confidence: 63%

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Okamoto

Sometani

Harada

et al. 2014

IEEE Electron Device Lett.

102

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We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO 2 /4H-SiC interface by thermal annealing with a BN planar diffusion source. The interface state density near the conduction band edge of 4H-SiC was effectively reduced by the B diffusion and the fabricated 4H-SiC MOSFETs showed a peak field-effect mobility of 102 cm 2 /Vs. The obtained high channel mobility cannot be explained by counter doping because B atoms act as acceptors in 4H-SiC. We suggest that the interfacial structural change of SiO 2 may be responsible for the reduced trap density and enhanced channel mobility.Index Terms-Boron passivation, channel mobility, interface state density, SiC MOSFETs.

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Section: Resultsmentioning

confidence: 63%

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Okamoto

Sometani

Harada

et al. 2014

IEEE Electron Device Lett.

102

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“…Indeed, using POCl 3 annealing enabled to reduce further the interface state density ( D it ) and increased drastically the channel mobility up to 89 cm 2 V −1 s −1 . Thereafter, other authors followed a similar approach, finding in some cases mobility values higher than 100 cm 2 V −1 s −1 with D it values lowered down to the 10 11 cm −2 eV −1 range .…”

Section: Channel Mobility In 4h‐sic Mosfetsmentioning

confidence: 92%

“…The most popular have been thermal annealing processes in nitrogen‐rich atmospheres (like NO or N 2 O) . Recently also annealing in phosphorus‐rich atmosphere (POCl 3 ) are receiving a great attention from the scientific community working on SiC .…”

Section: Channel Mobility In 4h‐sic Mosfetsmentioning

confidence: 99%

Challenges for energy efficient wide band gap semiconductor power devices

Roccaforte

Fiorenza

Greco

et al. 2014

Phys. Status Solidi A

113

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Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency of devices and modules. As a matter of fact, in the last decade intensive academic and industrial research efforts have resulted in the demonstration of both 4H‐SiC MOSFETs and GaN HEMTs exhibiting VnormalB2/Ron performances well beyond the silicon limits. In this paper, some of the present scientific challenges for SiC and GaN power devices technology are reviewed. In particular, the topics selected in this work will be the SiO2/SiC interface passivation processes to improve the channel mobility in 4H‐SiC MOSFETs, the current trends for gate dielectrics in GaN technology and the viable routes to obtain normally‐off HEMTs.

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“…Nevertheless, the poor quality of the interface between the Gate oxide and the SiC bulk has prevented the SiC MOSFETs to reach the market earlier [7]. Recent advances on the passivation process of the interface make it possible to overcome the carrier mobility issues of the very first commercial generation of this device [8].…”

Section: Observation Of Threshold Voltage Instability Mechanismmentioning

confidence: 99%