Abstract:A study on the impact of different growth and deposition techniques on the reliability of silicon dioxide (SiO2) layers on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) is presented and compared to channel mobilities that were extracted from lateral metal-oxide-semiconductor field-effect transistors (LMOSFETs). Oxide layers were formed using atomic layer deposition (ALD), low pressure chemical vapour deposition (LPCVD) and direct thermal growth, including post-deposition anneals (PDAs) i… Show more
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