High mobility of two-dimensional electrons in Ga1−xInxAs/InP heterostructures grown by atmospheric pressure MOVPE

Menu, E. P.; Moroni, D.; Patillon, J. N.; Ngo, Tan; André, J.P.

doi:10.1016/0022-0248(86)90573-7

Cited by 8 publications

(4 citation statements)

References 22 publications

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“…W e have studied both m u l t i p l e QW samples w i t h a stack o f QW's o f d i f f e r e n t thicknesses ( F r i j l i n k ' s s t r u c t u r e ) and a series o f s i n g l e QW. InP and InGaAs b u l k m a t e r i a l s have been studied e l sewhere ( 5,6,7).…”

Section: -Growth Proceduresmentioning

confidence: 99%

OPTICAL INVESTIGATION OF InGaAs-InP QUANTUM WELLS

Moroni¹,

Patillon²,

Menu³

et al. 1987

J. Phys. Colloques

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The optical properties of In0.53Ga0.47As/InP quantum wells have been investigated using photoluminescence and photoluminescence excitation techniques. The materials were grown by atmospheric pressure metalorganic vapor phase epitaxy. The nature of the luminescence has been determined by studying the PL dependence on temperature and excitation power. It is found to be mainly due to exciton recombination at 2 K and above 100 K to free carrier recombination. The capture efficiency is almost independent of well thickness whereas the radiative efficiency, which is very good, increases when well width decreases

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Section: -Growth Proceduresmentioning

confidence: 99%

OPTICAL INVESTIGATION OF InGaAs-InP QUANTUM WELLS

Moroni¹,

Patillon²,

Menu³

et al. 1987

J. Phys. Colloques

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“…High-quality lattice-matched Ga0.47In0.53As/InP heterostucture8 were grown by molecular beam epitaxy (MBE) [1], low-pressure metal-organic chemical vapor deposition (LP MOCVD) [2], atmospheric pressure MOCVD [3], and chloride CVD [4]. It has recently been demonstrated that GaInAs/InP heterostuctures with twodimensional electron gas can also be obtained by means of the liquid phase epitaxy (LPE) [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures

et al. 1991

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“…The growth conditions of our layers and procedures growers to improve the quality of their epitaxial mat-have already been reported [7]. The standard structure erials in terms of purity, mobility, composition uni-we have used for this study consists of a GaInAs(P) formity, and transition abruptness.…”

Section: Introductionmentioning

confidence: 99%

“…[6] and record ZDEG mobilities have the quaternary. To ensure a maximum accuracy and to recently been reported for GaInAs/InP heterostruc-prevent the scattering of data due to a possible spatial tures [7].…”

Section: Introductionmentioning

confidence: 99%

Assessment of some crystallographic, electrical and optical properties of MOVPE-grown GaInAs(P)/InP heterostructures

1988

Semicond. Sci. Technol.

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Some characterisation results for GA,ln,-,As,P,-,,/lnP heterostructures grown by atmospheric pressure MOVPE are presented. Hall effect, doublecrystal x-ray diffraction, low-temperature photoluminescence and Shubnikov-de Haas effect were used. Very high mobilities in GalnAs/lnP heterostructures have been recorded: 10 750,92 000 and 153 000 cm2 V-' S" at 300,77 and 10 K respectively for a residual doping level of 2 x 1015 cm-3. These record figures have been related to the presence of a two-dimensional electron gas which is shown to have two populated sub-bands with a total sheet density of ns= 2.9 x IO" cm-' and a mobility of 250 000 cm2 V-' S" at 2.17 K. GalnAsP has also been grown with a low residual doping level ( 3 . 5 ~ IOl5 cm-3] along with high mobilities ~( 3 0 0 K) =4800 cm2 V" S-' , ,477 K) =31 000 cmz V" S-'. A single photoluminescence line has been recorded at 0.887 eV with a full width at half maximum of 8 meV at 4 K. Finally, the influence of lattice mismatch on GalnAshP heterostructures has been investigated: morphology, Hall mobility and electrical properties were studied. In particular, the band gap shift is well interpreted by assuming the breaking of valence band gap degeneracy at k= 0 induced by the biaxial strain.

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High mobility of two-dimensional electrons in Ga1−xInxAs/InP heterostructures grown by atmospheric pressure MOVPE

Cited by 8 publications

References 22 publications

OPTICAL INVESTIGATION OF InGaAs-InP QUANTUM WELLS

OPTICAL INVESTIGATION OF InGaAs-InP QUANTUM WELLS

Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures

Assessment of some crystallographic, electrical and optical properties of MOVPE-grown GaInAs(P)/InP heterostructures

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