High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids

Ono, Shimpei; Seki, Shiro; Hirahara, R.; Tominari, Yukihiro; Takeya, Jun

doi:10.1063/1.2898203

Cited by 194 publications

(151 citation statements)

References 24 publications

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“…Thus far, various gate dielectric materials other than SiO 2 have been tested with rubrene single crystals as the standard material, and most of them showed good transistor performances [43,44]. The materials range from spincoated polymers such as poly(vinylpyrrolidone) (PVP) [7], fluoropolymer CYTOP (Asahi Glass Co.) [40,41], high-k oxides such as Ta 2 O 5 [43,45], and even an organic single-crystal insulator [46] and electrolytes such as ionic liquids [47,48]. Hulea et al reported systematic dependence of the mobility on dielectric constants of the gate dielectric materials and proposed the formation of polarons coupled with the polarization of the gate dielectric materials, owing to the additional mass gained in the renormalized quasiparticles as a result of the dressing effect [43].…”

Section: Sc-ofets Of Rubrenementioning

confidence: 99%

Organic field-effect transistors using single crystals

Hasegawa

Takeya

2009

Science and Technology of Advanced Materials

347

215

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Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs −1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

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Section: Sc-ofets Of Rubrenementioning

confidence: 99%

Organic field-effect transistors using single crystals

Hasegawa

Takeya

2009

Science and Technology of Advanced Materials

347

215

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“…Therefore, EDL transistor gated by ionic liquid or ionic gel based electrolyte could operate at a low voltage (typically below 2 V). 9,10 Recently, solid state electrolytes have also been proposed to act as gate dielectrics. 11,12 With the unique ionic/electronic hybrid behaviors, these electrolyte gated EDL transistors have been proposed for applications in pH sensors, 13 logic circuits, [14][15][16] artificial synapses, 17,18 etc.…”

Section: Introductionmentioning

confidence: 99%

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Chao

Zhu

Xiao

et al. 2015

Journal of Applied Physics

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Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 107, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm2/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

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“…15 Moreover, electric double layer gating method using ionic liquid is a promising technique to overcome the limit of conventional high- 3 dielectric due to its intrinsic high capacitance. 16 The ionic liquid exhibits an extremely huge capacitance, typically on the order of 1  20 µF/cm 2 , and hence large conductance modulation can be observed in the FET channel due to the effective control of a carrier density with the ionic liquid gate dielectric. 17,18 In this letter, we demonstrate a large conductance modulation ratio from high quality Bi 2 Se 3 thin films grown by MBE on sapphire substrates.…”

mentioning

confidence: 99%

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Son

Banerjee

Brahlek

et al. 2013

Applied Physics Letters

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A Bi 2 Se 3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material. a)

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High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids

Cited by 194 publications

References 24 publications

Organic field-effect transistors using single crystals

Organic field-effect transistors using single crystals

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

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