High mobility, hole transport materials for highly efficient PEDOT:PSS replacement in inverted perovskite solar cells

Neophytou, Marios; Griffiths, Jack; Fraser, James P.; Kirkus, Mindaugas; Hu, Chen; Nielsen, Christian B.; McCulloch, Iain

doi:10.1039/c7tc00858a

Cited by 62 publications

(55 citation statements)

References 29 publications

(15 reference statements)

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“…[121][122][123] Therefore,o ther HTL materials have been developed to replace spiro-OMeTAD to improve the device performance.P oly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), which is known to have ah igh WF and ap ositive influence on the built-in potential, [124] usually with PCBM as the ETL, is especially used in inverted PSCs. [125][126][127][128] AP CE of 9.2 %h as been obtained for the flexible PSCs with this very simple PET/ITO/ PEDOT:PSS/perovskite/PCBM/Al structure. [129] However, the high acidity of PEDOT: PSS threatens to corrode the ITOelectrode,leading to poor long-term device performance and stability when improperly encapsulated.…”

Section: Low-temperature Hole Transport Layersmentioning

confidence: 88%

Recent Advances in Flexible Perovskite Solar Cells: Fabrication and Applications

et al. 2019

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Flexible perovskite solar cells have attracted widespread research effort because of their potential in portable electronics. The efficiency has exceeded 18 % owing to the high‐quality perovskite film achieved by various low‐temperature fabrication methods and matching of the interface and electrode materials. This Review focuses on recent progress in flexible perovskite solar cells concerning low‐temperature fabrication methods to improve the properties of perovskite films, such as full coverage, uniform morphology, and good crystallinity; demonstrated interface layers used in flexible perovskite solar cells, considering key figures‐of‐merit such as high transmittance, high carrier mobility, suitable band gap, and easy fabrication via low‐temperature methods; flexible transparent electrode materials developed to enhance the mechanical stability of the devices; mechanical and long‐term environmental stability; an outlook of flexible perovskite solar cells in portable electronic devices; and perspectives of commercialization for flexible perovskite solar cells based on cost.

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Section: Low-temperature Hole Transport Layersmentioning

confidence: 88%

Recent Advances in Flexible Perovskite Solar Cells: Fabrication and Applications

et al. 2019

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“…[11][12][13][14] In inverted PSCs, the HTM plays an important role. [26][27][28][29][30][31][32] [a] R. Chen The HTM also affects the morphology of the perovskite layer.…”

Section: Introductionmentioning

confidence: 99%

Efficient and Stable Inverted Planar Perovskite Solar Cells Using a Triphenylamine Hole‐Transporting Material

Chen

et al. 2018

ChemSusChem

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Inverted perovskite solar cells (PSCs) with a p-i-n structure have attracted great attention. Normally, inorganic p-type metal oxides or polymers are used as the hole-transport material (HTM), a vital component in the inverted PSCs. However, this type of HTM often requires high processing temperatures and/or high costs. On the other hand, a commonly used organic HTM, poly(3,4-ethylenedioxythiophene polystyrene sulfonate (PEDOT:PSS), is sensitive to humidity and thus affects the stability of the PSCs. Herein, we employ a small molecule, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA) to replace PEDOT:PSS as a new HTM for inverted PSCs. Compared to a PEDOT:PSS-based device, m-MTDATA-based PSCs exhibit enhanced performance. The highest power conversion efficiency (PCE) was notably improved from 13.44 % (PEDOT:PSS) to 18.12 % (m-MTDATA), suggesting that m-MTDATA could be an efficient HTM to achieve high performance inverted PSCs. Furthermore, the m-MTDATA-based device demonstrated improved stability (retaining 90 % PCE) under ambient conditions over 1000 h compared with the PEDOT:PSS-based devices (retaining 40 % PCE).

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“…Mater. [35,36,[38][39][40][41][42] Moreover, domains show distinctive ribbed thickness variations and needle-like crystallites are occasionally apparent at the boundaries. In order to study underlying reasons for such variations, atomic force microscopy (AFM) was utilized to obtain information on the morphology and surface features of the individual channels.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Printed Flexible Organic Transistors with Tunable Aspect Ratios

Sadeghi

Delparastan

Pierre

et al. 2019

Adv Elect Materials

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film transistor show device performance reaching that of amorphous Si and solution-processed metal oxides. This high performance makes SOCs p-type OTFTs a strong candidate for several future complementary metal-oxide semiconductor applications. [13][14][15] Modulation of scale ratio of devices in a large array is one of the important parameters that governs circuit design. While most printing techniques can provide faster fabrication processes, the rapid on-demand modulation of W/L scale ratio in large array of devices remains as a challenge and a topic to investigate; especially for the myriad of specified circuit designs and application requirements. For instance, the tuning of the gain in each stage of an amplifier [16][17][18] or logic circuits [5] requires the modulation of OTFT W/L ratio. These configuration changes can be challenging, costly, and time consuming for common electrode printing techniques, such as screen printing and gravure printing. [19][20][21][22] These conventional mask-based approaches utilize a fixed pattern transfer that requires a full re-design for every new device structure. [21,23,24] Inkjet printing on the other hand is a nonimpact digital prototyping method that provides instant change of patterns. [25,26] This elimination of mask can reduce the processing costs especially for larger-scale production. [27] However, throughput of inkjet printing can become a limiting factor, especially when depositing over large area. [28] Interdigitated source and drain structure have been used in previous reports as a method to modify W/L ratio for a specific circuit design. [17,[29][30][31] The channel width (W) is modulated by changing the finger count. Meanwhile, channel length (L) is the smallest space between source and drain electrodes, and the resolution is associated to the printing technique. Low switching speed is one of the drawbacks of printed OTFTs compared to conventional Si technology, which can result from a number of factors such as mobility, dielectric layer thickness, and channel length. Achieving channel lengths smaller than 10 µm while maintaining high device yield is very challenging with printing techniques, especially for low-viscosity inks. The solution found to overcome this challenge is to utilize a combination of patterning techniques including the combination of conventional photolithography and direct-write printing techniques. [32] In parallel, there has been an interest to develop methods to decrease the source and drain electrode geometry and channel length using many printing methods. Interdigitated source and drain (SD) electrodes are typically used in electronics to increase channel width while maintaining small channel lengths, resulting in higher W/L ratios. There are few reports on printed interdigitated A fabrication technique that allows aspect ratio modulation in a large array of organic thin film transistors (OTFTs) is demonstrated. In this design, discrete interdigitated source and drain electrodes can be individually selected to create a range of aspe...

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High mobility, hole transport materials for highly efficient PEDOT:PSS replacement in inverted perovskite solar cells

Abstract: Herein, we report novel triarylamine based hole transporting materials (HTM) with high mobilities for perovskite solar cells.

Cited by 62 publications

References 29 publications

Recent Advances in Flexible Perovskite Solar Cells: Fabrication and Applications

Recent Advances in Flexible Perovskite Solar Cells: Fabrication and Applications

Efficient and Stable Inverted Planar Perovskite Solar Cells Using a Triphenylamine Hole‐Transporting Material

Printed Flexible Organic Transistors with Tunable Aspect Ratios

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