High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization

Xie, Ruilong; Phung, Thanh Hoa; He, Wei; Zhiqiang, Sun; Yu, Mingbin; Cheng, Zhiyuan; Zhu, Chunxiang

doi:10.1109/iedm.2008.4796703

Cited by 36 publications

(23 citation statements)

References 5 publications

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“…7(a) and (b) that N ss inside VB of Ge does not show clear dependence on the GeO x IL thickness, while N ss inside CB significantly increases with decreasing the GeO x IL thickness. These results also consistent with the stronger reduction of electron mobility in Ge nMOSFETs with increasing N s than that of hole mobility in Ge pMOSFETs [6], [7], [11], [12], [22]- [25].…”

Section: A Surface States Inside Bandssupporting

confidence: 93%

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Zhang

Takenaka

et al. 2014

IEEE Trans. Electron Devices

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Mechanisms of the mobility degradation in high normal field (or N s ) in Ge p-and n-metal-oxide-semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO x /Ge MOS interfaces: 1) carrier trapping due to surface states; 2) surface roughness scattering; and 3) electron transfer into the valleys with the high effective mass, have been systematically investigated. It is confirmed that the existence of surface states inside the valence band and the conduction band of Ge results in over estimation of the mobile inversion carrier concentration and the rapid reduction of the effective mobility. It is also found that the Hall hole and electron mobility in high N s region agree well with the theoretical surfaceroughnesslimited mobility, indicating that the high N s mobility in Ge MOSFETs are still significantly limited by surface roughness scattering. On the other hand, any evidence of the carrier repopulation into the subband with low mobility has not been experimentally identified in both Ge p-and n-MOSFETs yet.Index Terms-Germanium, metal-oxide-semiconductor field-effect transistor (MOSFET), mobility degradation.

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Section: A Surface States Inside Bandssupporting

confidence: 93%

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Zhang

Takenaka

et al. 2014

IEEE Trans. Electron Devices

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“…1b, it can be seen that Ge 3d 3/2 has one strong peak at 32.9 eV, which is shifted from the binding energy of GeO 2 . This should result from the incorporation of N because this peak lies between the binding energy of pure Ge-N (31.5-31.8 eV) [14] and that of pure GeO 2 (33.2-33.5 eV) [14][15][16]. N 1s shows two peaks at 397.4 eV and 401.2 eV, corresponding to the binding energy of N-Ge and N-O respectively and thus indicates the presence of Ge-O-N binding [17].…”

Section: Resultsmentioning

confidence: 97%

Improved performance of GeON as charge storage layer in flash memory by optimal annealing

Peng

2012

Microelectronics Reliability

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“…Lower I cp for the fluorinated sample is indicative of reduced D it . The mean D it value can be extracted according to the following equation [14,15],…”

Section: Electrical Characterization Of the Interface Trap Densitymentioning

confidence: 99%

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

et al. 2012

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High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization

Cited by 36 publications

References 5 publications

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Improved performance of GeON as charge storage layer in flash memory by optimal annealing

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

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High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization

Cited by 36 publications

References 5 publications

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO x /Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO x /Ge MOS Interfaces Fabricated by Plasma Postoxidation

Improved performance of GeON as charge storage layer in flash memory by optimal annealing

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

Contact Info

Product

Resources

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Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation