Abstract:- Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the charge carriers in the device channel. The Ge 2DHG is particularly interesting, since Ge exhibits the highest hole mobility among all semiconductors. In this paper, we report on the temperature-dependent direct current (DC)-characteristics of normally-on M… Show more
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