High-mobility conjugated polymer field-effect transistors

Sirringhaus, Henning; Tessler, Nir; Thomas, Dhanesh; Brown, P. J.; Friend, Richard H.

doi:10.1007/bfb0107468

Cited by 62 publications

(35 citation statements)

References 16 publications

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“…[31] p-Type semiconducting materials with low ionization potentials (typically less than 4.9-5.0 eV), such as regioregular P3HT, tend to exhibit large positive V T shifts upon exposure to air, presumaby due to doping of the polymer. [32] P3HT is known to form a reversible charge-transfer complex with oxygen. [33] Nevertheless, encouraging shelf-life stability, albeit with a low ON/OFF current ratio of < 10 3 , has been reported for P3HT FETs in a top-gate configuration, which may provide some encapsulation.…”

Section: Microcrystalline Polymersmentioning

confidence: 99%

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

2005

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Field‐effect transistors based on solution‐processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing‐based manufacturing processes for integrated transistor circuits are being developed to realize low‐cost, large‐area electronic products on flexible substrates. This article reviews the materials, charge‐transport, and device physics of solution‐processed organic field‐effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge‐injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored.

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Section: Microcrystalline Polymersmentioning

confidence: 99%

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

2005

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“…To determine how R C compares with R CH , we calculated both by plotting the total device resistance (R ON ) in the linear regime (V D << V G ), given as R ON ¶I D / ¶V D (where R ON = R C + R CH ) against the channel length. [30,31] From the intercept of the extrapolated characteristic at L= 0 lm with the y-axis, the value for R C can be calculated, whereas from the slope of the characteristic the R CH per unit channel length is obtained. .…”

Section: Methodsmentioning

confidence: 99%

Ambipolar Organic Field‐Effect Transistors Based on a Solution‐Processed Methanofullerene

Anthopoulos¹,

et al. 2004

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“…4, we plot the experimentally determined R p , multiplied with the channel width, and effective FE obtained from the scaling analysis of several organic semiconductors. In addition, data from a P3HT study of Sirringhaus et al 11 are included. An empirical relation is observed between the mobility and the parasitic resistance for the polymeric TFTs in contact with the gold/titanium stack.…”

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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer

Veenendaal

Huisman

et al. 2003

Applied Physics Letters

157

118

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The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M⍀ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1581389͔The interest in organic thin-film transistors ͑TFTs͒ has grown rapidly due to envisaged applications, such as integrated circuits 1 and active-matrix displays. 2 The switching speed of organic integrated circuits can be estimated from the performance of the individual transistors and is roughly proportional to ϳ FE /L 2 , 3 where L is the channel length of the transistor, and FE is the field-effect mobility. To reach higher switching speeds, the search for higher mobility materials is therefore important, but it is also of great interest to downsize the transistor geometries. In this work, the scaling behavior of the transfer characteristics with transistor channel length is investigated for a variety of solutionprocessable organic TFTs.In the experiments, we use heavily doped Si wafers as the gate electrode, with a 200-nm-thick layer of thermally oxidized SiO 2 as the gate-insulating layer. Using conventional lithography, gold source and drain contacts 100 nm thick are defined, with channel widths ranging from 1 mm to 1 cm and channel lengths between 0.75 and 40 m. The structures typically have an underetch of 0.5 m, which we neglect in the following analysis. A 10-nm layer of titanium acts as an adhesion layer for the gold on the SiO 2 . The SiO 2 layer is treated with the primer hexamethyldisilazane to make the surface hydrophobic. No special care is taken to clean the gold surface prior to deposition of the semiconductor. Poly͑2,5-thienylene vinylene͒ ͑PTV͒ films as semiconductor layer are deposited using a precursor-route process. 3 We systematically varied the processing conditions for the conversion from precursor to PTV, and we determined the average degree of conversion using the method described by Fuchigami et al. 4 This enabled us to systematically study PTV transistors at various degrees of conversion ranging from 60% to 100%, and consequently over a range of field-effect mobilities, between 10 Ϫ4 and 10 Ϫ3 cm 2 /V s. Poly͑3-hexyl thiophene͒ ͑P3HT͒ is spin-coated from a 1 wt % chloroform solution. Films of poly͓͑2-methoxy-5-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 1 C 10 -PPV) and poly͓͑2,5-di-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 10 C 10 -PPV), are spun from a 0.5 wt % toluene solution. Pentacene thin films are deposited using a precursor-route process. 3 The measurements are performed on freshly...

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High-mobility conjugated polymer field-effect transistors

Cited by 62 publications

References 16 publications

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

Ambipolar Organic Field‐Effect Transistors Based on a Solution‐Processed Methanofullerene

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

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